DSEC16-02A Datasheet, PDF (1/1 Pages) IXYS Corporation – HiPerFRED Epitaxial Diode with common cathode and soft recovery

DSEC 16-02A
HiPerFRED^TM Epitaxial Diode
with common cathode and soft recovery
I_FAV = 2x 8 A
V_RRM = 200 V
t_rr = 25 ns
V_RSM
V
200
V_RRM
V
200
Type
DSEC 16-02A
TO-220 AB
A
C
A
A
C
A
C (TAB)
Symbol
I_FRMS
I_FAVM
I_FRM
I_FSM
E_AS
I_AR
T_VJ
T_VJM
T_stg
P_tot
M_d
Weight
Conditions
Maximum Ratings
35
A
T_C = 150°C; rectangular, d = 0.5
8
A
t_P < 10 ms; rep. rating, pulse width limited by T_VJM tbd
A
T_VJ = 45°C; t_p = 10 ms (50 Hz), sine
80
A
T_VJ = 25°C; non-repetitive
I_AS = 2 A; L = 180 µH
0.5
mJ
V_A = 1.5·V_R typ.; f = 10 kHz; repetitive
0.2
A
-55...+175
°C
175
°C
-55...+150
°C
T_C = 25°C
mounting torque
60
W
0.4...0.6
Nm
typical
2
g
Symbol
I_R x
V_F y
R_thJC
R_thCH
t_rr
I_RM
Conditions
T_VJ = 25°C V_R = V_RRM
T_VJ = 150°C V_R = V_RRM
I_F = 8 A;
T_VJ = 150°C
T_VJ = 25°C
I_F = 1 A; -di/dt = 50 A/ms;
V_R = 30 V; T_VJ = 25°C
V_R = 100 V; I_F = 10 A; -di_F/dt = 100 A/ms
T_VJ = 100°C
Characteristic Values
typ. max.
50
mA
0.2 mA
0.94
V
1.30
V
2.5 K/W
0.5
K/W
25
ns
4.1
A
Pulse test: x Pulse Width = 5 ms, Duty Cycle < 2.0 %
y Pulse Width = 300 ms, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
A = Anode, C = Cathode, TAB = Cathode
Features
q _{International standard package}
q _{Planar passivated chips}
q _{Very short recovery time}
q _{Extremely low switching losses}
q _{Low IRM-values}
q _{Soft recovery behaviour}
q _{Epoxy meets UL 94V-0}
Applications
q _{Antiparallel diode for high frequency}
switching devices
q _{Antisaturation diode}
q _{Snubber diode}
q _{Free wheeling diode in converters}
and motor control circuits
q _{Rectifiers in switch mode power}
supplies (SMPS)
q _{Inductive heating}
q _{Uninterruptible power supplies (UPS)}
q _{Ultrasonic cleaners and welders}
Advantages
q _{Avalanche voltage rated for reliable}
operation
q _{Soft reverse recovery for low}
EMI/RFI
q _{Low IRM reduces:}
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
Dimensions see outlines.pdf
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