DSEA16-06AC Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerDynFREDTM Epitaxial Diode ISOPLUS220TM

HiPerDynFRED^TM Epitaxial Diode
ISOPLUS220^TM
Electrically Isolated Back Surface
Preliminary Data Sheet
DSEA
I_FAV =
V_RRM =
t_rr =
DSEA 16-06AC
DSEC 16-06AC
2x8 A
600 V
35 ns
V_RSM
V
V_RRM
V
Type
ISOPLUS 220^TM
1
2
3
DSEC
600
600
DSEA 16-06AC
600
600
DSEC 16-06AC
Symbol
Conditions
I_FRMS
I_FAVM
I_FSM
E_AS
I_AR
T_VJ
T_VJM
T_stg
T_L
P_tot
V_ISOL
F_C
Weight
T_C = 120°C; rectangular, d = 0.5
T_VJ = 45°C; t_p = 10 ms (50 Hz), sine
T_VJ = 25°C; non-repetitive
I_AS = 0.9 A; L = 180 µH
V_A = 1.5·V_R typ.; f = 10 kHz; repetitive
1.6 mm (0.063 in) from case for 10 s
T_C = 25°C
50/60 Hz RMS; I_ISOL ≤ 1 mA
mounting force with clip
typical
Symbol
I_R c
V_F d
Conditions
T_VJ = 25°C V_R = V_RRM
T_VJ = 150°C V_R = V_RRM
I_F = 10 A; T_VJ = 150°C
T_VJ = 25°C
1
2
3
1
23
Isolated back surface*
Maximum Ratings
35
A ^Features
8
A ^z Silicon chip on Direct-Copper-Bond
50
A
substrate
- High power dissipation
0.1 mJ _{- Isolated mounting surface}
- 2500V electrical isolation
0.1
-55...+175
175
-55...+150
260
50
A ^{z Low cathode to tab capacitance (<15pF)}
z _{Planar passivated chips}
°C z _{Very short recovery time}
°C z _{Extremely low switching losses}
°C z _{Low IRM-values}
°C ^{z Soft recovery behaviour}
W ^{z Epoxy meets UL 94V-0}
2500 V~
11...65 / 2.5...15 N / lb
2
g
Characteristic Values
typ. max.
60
µA
0.25
mA
1.42
V
2.10
V
Applications
z _{Antiparallel diode for high frequency}
switching devices
z _{Antisaturation diode}
z _{Snubber diode}
z _{Free wheeling diode in converters}
and motor control circuits
z _{Rectifiers in switch mode power}
supplies (SMPS)
z _{Inductive heating}
z _{Uninterruptible power supplies (UPS)}
z _{Ultrasonic cleaners and welders}
R_thJC
R_thCH
3
0.6
t_rr
I_F = 1 A; -di/dt = 50 A/µs;
35
V_R = 30 V; T_VJ = 25°C
I_RM
V_R = 100 V; I_F = 12 A; -di_F/dt = 100 A/µs
3.5
4.4
T_VJ = 100°C
Notes: Data given for T_VJ = 25^OC and per diode unless otherwise specified
c Pulse test: pulse Width = 5 ms, Duty Cycle < 2.0 %
d Pulse test: pulse Width = 300 µs, Duty Cycle < 2.0 %
IXYS reserves the right to change limits, test conditions and dimensions.
K/W _Advantages
K/W
z _{Avalanche voltage rated for reliable}
ns _operation
z _{Soft reverse recovery for low EMI/RFI}
A ^{z Low I}RM ^reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
See DSEC 16-06A data sheet for
characteristic curves.
© 2003 IXYS All rights reserved
DS98831(9/03)