DSA9-12F Datasheet, PDF (1/2 Pages) IXYS Corporation – Rectifier Diode Avalanche Diode

Rectifier Diode
Avalanche Diode
DS 9
DSA 9
V_RRM = 800-1800 V
I_F(RMS) = 18 A
I_F(AV)M = 11 A
V_RSM
V x _(BR)minÿ V_RRM
Standard
Avalanche
A
V
V
V
Types
Types
900
1300
1700
1900
1300
1750
1950
800
1200
1600
1800
DS 9-08F
DS 9-12F
DSA 9-12F
DSA 9-16F
DSA 9-18F
x Only for Avalanche Diodes
DO-203 AA
C
C
A
M5
A = Anode C = Cathode
Symbol
I
F(RMS)
I_F(AVM)
P_RSM
I_FSM
I²t
T_VJ
T_VJM
T_stg
M
d
Weight
Test Conditions
T =T
VJ
VJM
T_case = 150°C; 180° sine
DSA types, T_VJ = T_VJM, t_p = 10 ms
T_VJ = 45°C;
V_R = 0
T_VJ = T_VJM
V_R = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
T_VJ = 45°C
V_R = 0
T =T
VJ
VJM
V_R = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
Mounting torque
Maximum Ratings
18
A
11
A
4.5 kW
250
A
265
A
200
A
220
A
310
A²s
295
A²s
200
A²s
190
A²s
-40...+180
°C
180
°C
-40...+180
°C
2.2-2.8
19-25
5
Nm
lb.in.
g
Features
q _{International standard package,}
JEDEC DO-203 AA
q _{Planar glassivated chips}
Applications
q _{Supplies for DC power equipment}
q _{DC supply for PWM inverter}
q _{Field supply for DC motors}
q _{Battery DC power supplies}
Advantages
q _{Space and weight savings}
q _{Simple mounting}
q _{Improved temperature and power}
cycling
q _{Reduced protection circuits}
Dimensions in mm (1 mm = 0.0394")
Symbol
I_R
V_F
V
T0
r_T
R_thJC
R_thJH
d_S
d_A
a
Test Conditions
T_VJ = T_VJM; V_R = V_RRM
I_F = 36 A; T_VJ = 25°C
For power-loss calculations only
T_VJ = T_VJM
DC current
180° sine
DC current
Creepage distance on surface
Strike distance through air
Max. allowable acceleration
Characteristic Values
£
3 mA
£ 1.4
V
0.85
V
15 mW
2.0 K/W
2.17 K/W
3.0 K/W
2.0 mm
2.0 mm
100 m/s²
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
© 2000 IXYS All rights reserved
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