DPG30C400PB Datasheet, PDF (1/4 Pages) IXYS Corporation – High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode

DPG 30 C 400 PB
HiPerFRED²
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Common Cathode
Part number
DPG 30 C 400 PB
1
2
3
V_RRM = 400 V
I_FAV = 2x 15 A
t _rr =
45 ns
Features / Advantages:
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Applications:
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
Backside: cathode
Package:
● Housing: TO-220
●rIndustry standard outline
●rEpoxy meets UL 94V-0
●rRoHS compliant
Symbol
V_RRM
I_R
V_F
I_FAV
V_F0
r_F
R _thJC
T _VJ
P_tot
I _FSM
I _RM
t _rr
Definition
Conditions
max. repetitive reverse voltage
reverse current
forward voltage
V_R =
V_R =
I_F =
I_F =
IF =
I_F =
400 V
400 V
15 A
30 A
15 A
30 A
average forward current
rectangular
threshold voltage
slope resistance
for power loss calculation only
d = 0.5
thermal resistance junction to case
virtual junction temperature
total power dissipation
max. forward surge current
max. reverse recovery current
t = 10 ms (50 Hz), sine
reverse recovery time
IF = 15 A; V_R = 270 V
-diF/dt = 200 A/µs
C_J
junction capacitance
V_R = 200 V; f = 1 MHz
T_{VJ = 25°C}
T_VJ = 25°C
T_VJ = 150°C
T_VJ = 25°C
T_VJ = 150°C
T_C = 140°C
T_VJ = 175°C
T_C = 25°C
T_VJ = 45°C
T_VJ = 25°C
T_VJ = 125°C
T_VJ = 25°C
T_VJ = 125°C
T_VJ = 25°C
Ratings
min. typ. max. Unit
400 V
1 µA
0.18 mA
1.39 V
1.63 V
1.14 V
1.40 V
15 A
0.84 V
16.5 mΩ
1.70 K/W
-55
175 °C
90 W
190 A
4
A
5.5
A
45
ns
70
ns
16
pF
IXYS reserves the right to change limits, conditions and dimensions.
© 2010 IXYS all rights reserved
Data according to IEC 60747and per diode unless otherwise specified
20100127a