DPG30C200PB Datasheet, PDF (1/2 Pages) IXYS Corporation – High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode

HiPerFRED²
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Common Cathode
DPG 30 C 200PB
advanced
V_RRM = 200 V
I_FAV = 2x 15 A
t _rr =
35 ns
Part number
DPG 30 C 200PB
1
2
3
Features / Advantages:
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable
operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Applications:
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
Backside: cathode
Package:
TO-220AB
● Industry standard outline
● Epoxy meets UL 94V-0
● RoHS compliant
Symbol
V_RRM
I_R
V_F
I _FAV
V_F0
r_F
R _thJC
T_VJ
P_tot
I _FSM
I _RM
t _rr
C_J
E_AS
I_AR
Definition
max. repetitive reverse voltage
Conditions
reverse current
forward voltage
V_R =
V_R =
I_F =
I_F =
200 V
200 V
15 A
30 A
average forward current
I_F = 15 A
I_F = 30 A
rectangular, d = 0.5
threshold voltage
slope resistance
for power loss calculation only
T_VJ = 25 °C
T_VJ = 25 °C
T_VJ = 150 °C
T_VJ = 25 °C
T_VJ = 150 °C
T_C = 140 °C
T_VJ = 175 °C
thermal resistance junction to case
virtual junction temperature
total power dissipation
max. forward surge current
max. reverse recovery current
reverse recovery time
junction capacitance
non-repetitive avalanche energy
repetitive avalanche current
t_p = 10 ms (50 Hz), sine
I_F = 20 A;
-di_F /dt = 200 A/µs
V_R = 100 V
V_R = 100 V; f = 1 MHz
I _AS = tbd A; L = 100 µH
V_A = 1.5·V_R typ.; f = 10 kHz
T_C = 25 °C
T_VJ = 45 °C
T_VJ = 25 °C
T_VJ = 125 °C
T_VJ = 25 °C
T_VJ = 125 °C
T_VJ = 25 °C
T_VJ = 25 °C
Ratings
min. typ. max.
200
1
0.08
1.25
1.50
1.00
1.27
15
0.69
17.3
1.70
-55
175
90
150
3
35
tbd
tbd
tbd
Unit
V
µA
mA
V
V
V
V
A
V
mΩ
K/W
°C
W
A
A
A
ns
ns
pF
mJ
A
IXYS reserves the right to change limits, conditions and dimensions.
© 2006 IXYS all rights reserved
* Data according to IEC 60747and per diode unless otherwise specified