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DPG20C200PB Datasheet, PDF (1/4 Pages) IXYS Corporation – High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode | |||
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DPG 20 C 200 PB
HiPerFRED²
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Common Cathode
Part number
DPG 20 C 200 PB
1
2
3
VRRM = 200 V
IFAV = 2x 10 A
t rr =
35 ns
Features / Advantages:
â Planar passivated chips
â Very low leakage current
â Very short recovery time
â Improved thermal behaviour
â Very low Irm-values
â Very soft recovery behaviour
â Avalanche voltage rated for reliable operation
â Soft reverse recovery for low EMI/RFI
â Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Applications:
â Antiparallel diode for high frequency
switching devices
â Antisaturation diode
â Snubber diode
â Free wheeling diode
â Rectifiers in switch mode power
supplies (SMPS)
â Uninterruptible power supplies (UPS)
Backside: cathode
Package:
â Housing: TO-220
ârIndustry standard outline
ârEpoxy meets UL 94V-0
ârRoHS compliant
Symbol
VRRM
IR
VF
IFAV
VF0
rF
RthJC
T VJ
Ptot
I FSM
I RM
trr
Definition
Conditions
max. repetitive reverse voltage
reverse current
forward voltage
VR =
VR =
IF =
IF =
IF =
IF =
200 V
200 V
10 A
20 A
10 A
20 A
average forward current
rectangular
threshold voltage
slope resistance
for power loss calculation only
d = 0.5
thermal resistance junction to case
virtual junction temperature
total power dissipation
max. forward surge current
max. reverse recovery current
t = 10 ms (50 Hz), sine
reverse recovery time
IF = 10 A; VR = 130 V
-diF/dt = 200 A/µs
CJ
junction capacitance
VR = 150 V; f = 1 MHz
TVJ = 25°C
TVJ = 25°C
TVJ = 150°C
TVJ = 25°C
TVJ = 150°C
TC = 145°C
TVJ = 175°C
TC = 25°C
TVJ = 45°C
TVJ = 25°C
TVJ = 125°C
TVJ = 25°C
TVJ = 125°C
TVJ = 25°C
Ratings
min. typ. max. Unit
200 V
1 µA
0.06 mA
1.27 V
1.45 V
0.98 V
1.17 V
10 A
0.74 V
17.7 mΩ
2.30 K/W
-55
175 °C
65 W
140 A
3
A
5.5
A
35
ns
45
ns
15
pF
IXYS reserves the right to change limits, conditions and dimensions.
© 2009 IXYS all rights reserved
Data according to IEC 60747and per diode unless otherwise specified
20090323a
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