DPG120C300QB Datasheet, PDF (1/2 Pages) IXYS Corporation – High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode

HiPerFRED
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Common Cathode
Part number (Marking on product)
DPG 120 C 300QB
1
2
3
DPG 120 C 300QB
advanced
V_RRM = 300 V
I_FAV = 2x 60 A
t _rr =
35 ns
Features / Advantages:
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable
operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Applications:
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
Package:
TO-3P
● Industry standard outline
- compatible with TO-247
● Epoxy meets UL 94V-0
● RoHS compliant
Symbol
V_RRM
I_R
V_F
I _FAV
V_F0
r_F
R _thJC
T_VJ
P_tot
I_FSM
I_RM
t rr
C_J
E_AS
I_AR
Definition
max. repetitive reverse voltage
Conditions
reverse current
forward voltage
V_R = 300 V
V_R = 300 V
I_F = 60 A
I_F = 120 A
average forward current
I_F = 60 A
I_F = 120 A
rectangular, d = 0.5
threshold voltage
slope resistance
for power loss calculation only
T_VJ = 25 °C
T_VJ = 25 °C
T_VJ = 150 °C
T_VJ = 25 °C
T_VJ = 150 °C
T = 125 °C
C
T = 175 °C
VJ
thermal resistance junction to case
virtual junction temperature
total power dissipation
max. forward surge current
max. reverse recovery current
reverse recovery time
junction capacitance
non-repetitive avalanche energy
repetitive avalanche current
t_p = 10 ms (50 Hz), sine
I_F = 60 A;
-di /dt = 200 A/µs
F
V_R = 100 V
V_R = 150 V; f = 1 MHz
I _AS = A; L = 100 µH
V_A = 1.5·V_R typ.; f = 10 kHz
T_C = 25 °C
T_VJ = 45 °C
T_VJ = 25 °C
T_VJ = 125 °C
T_VJ = 25 °C
T_VJ = 125 °C
T_VJ = 25 °C
T_VJ = 25 °C
Ratings
min. typ. max.
300
1
0.35
1.40
1.72
1.10
1.45
60
0.69
5.8
0.55
-55
175
275
550
3
35
tbd
tbd
Unit
V
µA
mA
V
V
V
V
A
V
mΩ
K/W
°C
W
A
A
A
ns
ns
pF
mJ
A
IXYS reserves the right to change limits, conditions and dimensions.
© 2006 IXYS all rights reserved
* Data according to IEC 60747and per diode unless otherwise specified