DPG10I200PA Datasheet, PDF (1/4 Pages) IXYS Corporation – High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode

DPG 10 I 200 PA
HiPerFRED²
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Single Diode
Part number
DPG 10 I 200 PA
3
1
V_RRM =
I_FAV =
t _rr =
200 V
10 A
35 ns
Features / Advantages:
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Applications:
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
Backside: cathode
Package:
● Housing: TO-220
●rIndustry standard outline
●rEpoxy meets UL 94V-0
●rRoHS compliant
Symbol
V_RRM
I_R
V_F
I_FAV
V_F0
r_F
R_thJC
T _VJ
P_tot
I _FSM
I _RM
t_rr
Definition
Conditions
max. repetitive reverse voltage
reverse current
forward voltage
V_R =
V_R =
I_F =
I_F =
IF =
I_F =
200 V
200 V
10 A
20 A
10 A
20 A
average forward current
rectangular
threshold voltage
slope resistance
for power loss calculation only
d = 0.5
thermal resistance junction to case
virtual junction temperature
total power dissipation
max. forward surge current
max. reverse recovery current
t = 10 ms (50 Hz), sine
reverse recovery time
IF = 10 A; V_R = 130 V
-diF/dt = 200 A/µs
C_J
junction capacitance
V_R = 150 V; f = 1 MHz
T_{VJ = 25°C}
T_VJ = 25°C
T_VJ = 150°C
T_VJ = 25°C
T_VJ = 150°C
T_C = 145°C
T_VJ = 175°C
T_C = 25°C
T_VJ = 45°C
T_VJ = 25°C
T_VJ = 125°C
T_VJ = 25°C
T_VJ = 125°C
T_VJ = 25°C
Ratings
min. typ. max. Unit
200 V
1 µA
0.06 mA
1.27 V
1.45 V
0.98 V
1.17 V
10 A
0.74 V
17.7 mΩ
2.30 K/W
-55
175 °C
65 W
140 A
3
A
5.5
A
35
ns
45
ns
15
pF
IXYS reserves the right to change limits, conditions and dimensions.
© 2009 IXYS all rights reserved
Data according to IEC 60747and per diode unless otherwise specified
20090323a