DESC29-06AC Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerFRED Epitaxial Diode ISOPLUS220 Electrically Isolated Back Surface

ADVANCE TECHNICAL INFORMATION
DSEC29-06AC
HiPerFRED^TM Epitaxial Diode
ISOPLUS220^TM
Electrically Isolated Back Surface
I_FAV = 2x15 A
V_RRM = 600 V
t_rr = 35 ns
V_RSM
V
V_RRM
V
Type
ISOPLUS220^TM
600
600
DSEC29-06AC
1
2
3
Symbol
I_FRMS
I_FAVM
I_FSM
E_AS
I_AR
T_VJ
T_VJM
T_stg
P_tot
V_ISOL
F_C
Weight
Conditions
T_C = 140°C; rectangular, d = 0.5
T_VJ = 45°C; t_p = 10 ms (50 Hz), sine
T_VJ = 25°C; non-repetitive
I_AS = 0.9 A; L = 180 µH
V_A = 1.5·V_R typ.; f = 10 kHz; repetitive
T_C = 25°C
50/60 Hz RMS; I_ISOL ≤ 1 mA
Mounting force
typical
Maximum Ratings
35
A
15
A
110
A
0.1
mJ
0.1
-55...+175
175
-55...+150
95
2500
11...65 / 2.4...11
3
A
°C
°C
°C
W
V~
N / lb
g
Symbol
I_R Q
V_F R
R_thJC
R_thCH
t_rr
I_RM
Conditions
T_VJ = 25°C V_R = V_RRM
T_VJ = 150°C V_R = V_RRM
I_F = 15 A; T_VJ = 150°C
T_VJ = 25°C
I_F = 1 A; -di/dt = 100 A/µs;
V_R = 30 V; T_VJ = 25°C
V_R = 100 V; I_F = 25 A; -di_F/dt = 100 A/µs
T_VJ = 100°C
Characteristic Values
typ. max.
100
µA
0.5
mA
1.49
V
2.04
V
1.6
K/W
0.6
K/W
35
ns
4
4.9
A
Notes: Data given for T_VJ = 25^OC and per diode unless otherwise specified
R Pulse test: pulse Width = 5 ms, Duty Cycle < 2.0 %
S Pulse test: pulse Width = 300 µs, Duty Cycle < 2.0 %
1
2
3
* Patent pending
Isolated back surface *
Features
l _{Silicon chip on Direct-Copper-Bond}
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
l _{Low cathode to tab capacitance (<15pF)}
l _{Planar passivated chips}
l _{Very short recovery time}
l _{Extremely low switching losses}
l _{Low IRM-values}
l _{Soft recovery behaviour}
l _{Epoxy meets UL 94V-0}
Applications
l _{Antiparallel diode for high frequency}
switching devices
l _{Antisaturation diode}
l _{Snubber diode}
l _{Free wheeling diode in converters}
and motor control circuits
l _{Rectifiers in switch mode power}
supplies (SMPS)
l _{Inductive heating}
l _{Uninterruptible power supplies (UPS)}
l _{Ultrasonic cleaners and welders}
Advantages
l _{Avalanche voltage rated for reliable}
operation
l _{Soft reverse recovery for low EMI/RFI}
l _{Low IRM reduces:}
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
IXYS reserves the right to change limits, test conditions and dimensions.
98785 (12/00)
© 2000 IXYS All rights reserved