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DE475-501N44A_09 Datasheet, PDF (1/5 Pages) IXYS Corporation – RF Power MOSFET | |||
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DE475-501N44A
RF Power MOSFET
⦠N-Channel Enhancement Mode
⦠Low Qg and Rg
⦠High dv/dt
⦠Nanosecond Switching
⦠30MHz Maximum Frequency
Symbol
VDSS
VDGR
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 Mâ¦
Maximum Ratings
500 V
500 V
VDSS = 500 V
ID25
= 48 A
RDS(on) ⤠0.13 â¦
PDC
= 1800W
VGS
VGSM
Continuous
Transient
±20 V
±30 V
ID25
Tc = 25°C
IDM
Tc = 25°C, pulse width limited by TJM
48 A
288 A
IAR
EAR
dv/dt
PDC
PDHS
PDAMB
Tc = 25°C
Tc = 25°C
IS ⤠IDM, di/dt ⤠ï°100A/µs, VDD ⤠VDSS,
Tj ⤠150°C, RG = 0.2â¦
IS = 0
Tc = 25°C
Derate 4.0W/°C above 25°C
Tc = 25°C
44 A
30 mJ
5 V/ns
>200 V/ns
1800
730
W
GATE
W
4.5 W
DRAIN
RthJC
RthJHS
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
0.08 C/W
0.20 C/W
Test Conditions
Characteristic Values
TJ = 25°C unless otherwise specified
min. typ.
max.
VGS = 0 V, ID = 3 ma
500
V
VDS = VGS, ID = 4 ma
3.5
4.5
5.5 V
VGS = ±20 VDC, VDS = 0
±100 nA
VDS = 0.8 VDSS TJ = 25°C
VGS = 0
TJ = 125°C
50 µA
1 mA
VGS = 15 V, ID = 0.5ID25
Pulse test, t ⤠300µS, duty cycle d ⤠2%
0.13 â¦
SG1 SG2
SD1 SD2
Features
⢠Isolated Substrate
â high isolation voltage (>2500V)
â excellent thermal transfer
â Increased temperature and power
cycling capability
⢠IXYS advanced low Qg process
⢠Low gate charge and capacitances
â easier to drive
â faster switching
⢠Low RDS(on)
⢠Very low insertion inductance (<2nH)
⢠No beryllium oxide (BeO) or other haz-
ardous materials
gfs
VDS = 15 V, ID = 0.5ID25, pulse test
14
S
Advantages
TJ
-55
+175 °C
⢠Optimized for RF and high speed
switching at frequencies to 30MHz
TJM
175
°C
⢠Easy to mountâno insulators needed
⢠High power density
Tstg
-55
+175 °C
TL
1.6mm (0.063 in) from case for 10 s
300
°C
Weight
3
g
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