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DE375-102N10A Datasheet, PDF (1/3 Pages) IXYS Corporation – RF Power MOSFET | |||
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DE375-102N10A
RF Power MOSFET
N-Channel Enhancement Mode
Low Qg and Rg
High dv/dt
Nanosecond Switching
VDSS
ID25
= 1000 V
= 10 A
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
dv/dt
PDC
PDHS
PDAMB
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 Mâ¦
Continuous
Transient
Tc = 25°C
Tc = 25°C, pulse width limited by TJM
Tc = 25°C
Tc = 25°C
IS ⤠IDM, di/dt ⤠ï°100A/µs, VDD ⤠VDSS,
Tj ⤠150°C, RG = 0.2â¦
IS = 0
Tc = 25°C
Derate 4.4W/°C above 25°C
Tc = 25°C
Maximum Ratings
1000 V
1000 V
±20 V
±30 V
10 A
60 A
10 A
30 mJ
5 V/ns
RDS(on) =
PDC
=
>200 V/ns
940 W
425
GATE
W
4.5 W
1.2 â¦
940 W
DRAIN
RthJC
0.16 C/W
SG1 SG2
SD1 SD2
RthJHS
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
0.23 C/W
Test Conditions
Characteristic Values
TJ = 25°C unless otherwise specified
min. typ. max.
VGS = 0 V, ID = 3 ma
1000
V
VDS = VGS, ID = 4 ma
2.5
5.5 V
VGS = ±20 VDC, VDS = 0
±100 nA
VDS = 0.8 VDSS TJ = 25°C
VGS = 0
TJ = 125°C
50 µA
1 mA
VGS = 15 V, ID = 0.5ID25
Pulse test, t ⤠300µS, duty cycle d ⤠2%
1.2 â¦
Features
⢠Isolated Substrate
â high isolation voltage (>2500V)
â excellent thermal transfer
â Increased temperature and power
cycling capability
⢠IXYS advanced low Qg process
⢠Low gate charge and capacitances
â easier to drive
â faster switching
⢠Low RDS(on)
⢠Very low insertion inductance (<2nH)
⢠No beryllium oxide (BeO) or other
hazardous materials
gfs
TJ
TJM
Tstg
TL
Weight
VDS = 15 V, ID = 0.5ID25, pulse test
1.6mm (0.063 in) from case for 10 s
6 18
S Advantages
-55
+150 °C
⢠Optimized for RF and high speed
switching at frequencies to 50MHz
150
°C ⢠Easy to mountâno insulators needed
⢠High power density
-55
+150 °C
300
°C
3
g
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