DE275X2-501N16A Datasheet, PDF (1/4 Pages) IXYS Corporation – RF Power MOSFET

DE275X2-501N16A
RF Power MOSFET
♦ Common Source Push-Pull Pair
♦ N-Channel Enhancement Mode
♦ Low Q_g and R_g
♦ High dv/dt
♦ Nanosecond Switching
The DE275X2-501N16A is a matched pair of RF power MOSFET devices in a
common source configuration. The device is optimized for push-pull or paral-
lel operation in RF generators and amplifiers at frequencies to >65 MHz.
Unless noted, specifications are for each device
V_DSS
I_D25
R_DS(on)
P_DC
= 500 V
= 16 A
= 0.38 Ω
= 1180 W
Symbol Test Conditions
Maximum Ratings
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_DM
I_AR
E_AR
dv/dt
P (1)
DC
P (1)
DHS
P (1)
DAMB
R (1)
thJC
R (1)
thJHS
Symbol
V_DSS
V_GS(th)
I_GSS
I_DSS
R_DS(on)
T_J = 25°C to 150°C
500 V
T_J = 25°C to 150°C; R_GS = 1 MΩ
500 V
Continuous
±20 V
Transient
±30 V
T_c = 25°C
16 A
DRAIN 1
DRAIN 2
T_c = 25°C, pulse width limited by T_JM
186 A
T_c = 25°C
T_c = 25°C
16
A _{GATE 1}
20 mJ
GATE 2
I_S ≤ I_DM, di/dt ≤ 100A/µs, V_DD ≤ V_DSS,
T_j ≤ 150°C, R_G = 0.2Ω
I_S = 0
T_c = 25°C, Derate 6.0W/°C above 25°C
T_c = 25°C
5 V/ns
>200 V/ns
1180 W
750 W
5.0 W
0.13 C/W
0.17 C/W
Test Conditions
Characteristic Values
T_J = 25°C unless otherwise specified
V_GS = 0 V, I_D = 3 ma
V_DS = V_GS, I_D = 4 ma
V_GS = ±20 V_DC, V_DS = 0
V_DS = 0.8 V_DSS T_J = 25°C
V_GS = 0
T_J = 125°C
min.
500
2.5
V_GS = 15 V, I_D = 0.5I_D25
Pulse test, t ≤ 300µS, duty cycle d ≤ 2%
typ. max.
V
5.5 V
±100 nA
50 µA
1 mA
0.38 Ω
SG1 SD1
SD2 SG2
Features
• Isolated Substrate
− high isolation voltage (>2500V)
− excellent thermal transfer
− Increased temperature and power
cycling capability
• IXYS advanced low Q_g process
• Low gate charge and capacitances
− easier to drive
− faster switching
• Low R_DS(on)
• Very low insertion inductance (<2nH)
• No beryllium oxide (BeO) or other
hazardous materials
Advantages
• High Performance Push-Pull RF
Package
• Optimized for RF and high speed
switching at frequencies to >65MHz
• Easy to mount—no insulators needed
• High power density
g_fs
V_DS = 15 V, I_D = 0.5I_D25, pulse test
2
11
S
Note: All specifications are per each
T_J
-55
+175 °C ^{transistor, unless otherwise noted.}
T_JM
175
°C
(1) _{Thermal specifications are for the}
package, not per transistor
T_stg
-55
+175 °C
T_L
1.6mm (0.063 in) from case for 10 s
300
°C
Weight
4
g