DE275X2-501N16 Datasheet, PDF (1/3 Pages) IXYS Corporation – RF Power MOSFET

Directed Energy, Inc.
An IXYS Company
DE275X2-501N16A
RF Power MOSFET
♦ Common Source Push-Pull Pair
♦ N-Channel Enhancement Mode
♦ Low Q_g and R_g
♦ High dv/dt
♦ Nanosecond Switching
The DE275X2-501N16A is a matched pair of RF power MOSFET devices in
a common source configuration. The device is optimized for push-pull or
parallel operation in RF generators and amplifiers at frequencies to >65
MHz.
Preliminary Data Sheet
V_DSS
=
I_D25
=
R_DS(on) =
P_DHS
=
500 V
16 A
0.5 Ω
750 W
Unless noted, specifications are for each output device
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_DM
I_AR
E_AR
dv/dt
P_DHS ⁽¹⁾
P_DAMB ⁽¹⁾
R_thJHS ⁽¹⁾
T_J
T_JM
T_stg
T_L
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T_c = 25°C
T_c = 25°C, pulse width limited by T_JM
T_c = 25°C
T_c = 25°C
I_S ≤ I_DM, di/dt ≤ 100A/µs, V_DD ≤ V_DSS,
T_j ≤ 150°C, R_G = 0.2Ω
I_S = 0
T_c = 25°C, Derate 6.0W/°C above 25°C
T_c = 25°C
1.6mm (0.063 in) from case for 10 s
Maximum Ratings
500
V
500
V
±20
V
±30
V
DRAIN 1
DRAIN 2
16
A
96
A _{GATE 1}
16
A
GATE 2
20 mJ
5 V/ns
SG1 SD1
SD2 SG2
>200
750
5.0
0.17
-55…+150
150
-55…+150
300
4
V/ns
W
W
K/W
°C
°C
°C
°C
g
Features
• Isolated Substrate
− high isolation voltage (>2500V)
− excellent thermal transfer
− Increased temperature and power
cycling capability
• IXYS advanced low Q_g process
• Low gate charge and capacitances
− easier to drive
− faster switching
• Low R_DS(on)
• Very low insertion inductance (<2nH)
• No beryllium oxide (BeO) or other
hazardous materials
Symbol
V_DSS
V_GS(th)
I_GSS
I_DSS
R_DS(on)
g_fs
Test Conditions
Characteristic Values
T_J = 25°C unless otherwise specified
min.
typ. max.
V_GS = 0 V, I_D = 3 ma
500
V
V_DS = V_GS, I_D = 4 ma
2.5
5.5 V
V_GS = ±20 V_DC, V_DS = 0
±100 nA
V_DS = 0.8 V_DSS T_J = 25°C
V_GS = 0
T_J = 125°C
50 µA
1 mA
V_GS = 15 V, I_D = 0.5I_D25
Pulse test, t ≤ 300µS, duty cycle d ≤ 2%
0.5 Ω
V_DS = 15 V, I_D = 0.5I_D25, pulse test
2
6
S
Advantages
• High Performance Push-Pull RF
Package
• Optimized for RF and high speed
switching at frequencies to >65MHz
• Easy to mount—no insulators needed
• High power density
Note: All specifications are per each tran-
sistor, unless otherwise noted.
(1) _{Thermal specifications are for the}
package, not per transistor