DE275-102N06A Datasheet, PDF (1/6 Pages) IXYS Corporation – RF Power MOSFET

DE275-102N06A
RF Power MOSFET
N-Channel Enhancement Mode
Low Q_g and R_g
High dv/dt
Nanosecond Switching
Ideal for Class C, D, & E Applications
V_DSS = 1000 V
I_D25
=
8A
R_DS(on) = _{1.5 Ω}
Symbol Test Conditions
Maximum Ratings
P_DC
= 590 W
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_DM
I_AR
E_AR
dv/dt
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T_c = 25°C
T_c = 25°C, pulse width limited by T_JM
T_c = 25°C
T_c = 25°C
I_S ≤ I_DM, di/dt ≤ 100A/µs, V_DD ≤ V_DSS,
T_j ≤ 150°C, R_G = 0.2Ω
I_S = 0
1000 V
1000 V
±20 V
±30 V
8A
48 A
6A
20 mJ
5 V/ns _GATE
>200 V/ns
DRAIN
P_DC
P_DHS
P_DAMB
R_thJC
R_thJHS
Symbol
T_c = 25°C
Derate 2.0W/°C above 25°C
T_c = 25°C
Test Conditions
590 W
300 W
3.0 W
0.25 C/W
0.50 C/W
Characteristic Values
T_J = 25°C unless otherwise specified
V_DSS
V_GS(th)
I_GSS
I_DSS
V_GS = 0 V, I_D = 3 mA
V_DS = V_GS, I_D = 250 µA
V_GS = ±20 V_DC, V_DS = 0
V_DS = 0.8 V_DSS T_J = 25°C
V_GS = 0
T_J = 125°C
min.
1000
3.5
R_DS(on)
V_GS = 15 V, I_D = 0.5I_D25
Pulse test, t ≤ 300µS, duty cycle d ≤ 2%
g_fs
V_DS = 20 V, I_D = 0.5I_D25, pulse test
2.5
R_thJHS
T_J
-55
T_JM
T_stg
-55
T_L
1.6mm (0.063 in) from case for 10 s
Weight
typ. max.
V
5.0 V
±100 nA
50 µA
1 mA
1.5
Ω
4.3
7S
0.50
C/W
+175 °C
175
°C
+175 °C
300
°C
2
g
SG1 SG2
SD1 SD2
Features
• Isolated Substrate
− high isolation voltage (>2500V)
− excellent thermal transfer
− Increased temperature and power
cycling capability
• IXYS advanced low Q_g process
• Low gate charge and capacitances
− easier to drive
− faster switching
• Low R_DS(on)
• Very low insertion inductance (<2nH)
• No beryllium oxide (BeO) or other
hazardous materials
Advantages
• Optimized for RF and high speed
switching at frequencies to 100MHz
• Easy to mount—no insulators needed
• High power density