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DE150-501N04A Datasheet, PDF (1/5 Pages) List of Unclassifed Manufacturers – N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching RF Power MOSFET | |||
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DE150-501N04A
RF Power MOSFET
N-Channel Enhancement Mode
Low Qg and Rg
High dv/dt
Nanosecond Switching
VDSS
ID25
= 500 V
= 4.5 A
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
dv/dt
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 Mâ¦
Continuous
Transient
Tc = 25°C
Tc = 25°C, pulse width limited by TJM
Tc = 25°C
Tc = 25°C
IS ⤠IDM, di/dt ⤠ï°100A/µs, VDD ⤠VDSS,
Tj ⤠150°C, RG = 0.2â¦
IS = 0
Maximum Ratings
500 V
500 V
±20 V
±30 V
4.5 A
27 A
4.5 A
- mJ
3.5 V/ns
>200 V/ns
RDS(on) â¤
PDC
=
1.5 â¦
200W
PDC
PDHS
PDAMB
RthJC
RthJHS
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
gfs
TJ
TJM
Tstg
TL
Weight
200 W
DRAIN
Tc = 25°C
Derate 4.4W/°C above 25°C
Tc = 25°C
80
W GATE
3.5 W
0.74 C/W
1.50 C/W
SG1 SG2
SD1 SD2
Test Conditions
Characteristic Values
TJ = 25°C unless otherwise specified
min. typ.
max.
VGS = 0 V, ID = 3 ma
500
V
VDS = VGS, ID = 250 µa
2.5
3.4
4V
VGS = ±20 VDC, VDS = 0
±100 nA
VDS = 0.8 VDSS TJ = 25°C
VGS = 0
TJ = 125°C
25 µA
250 µA
VGS = 15 V, ID = 0.5ID25
Pulse test, t ⤠300µS, duty cycle d ⤠2%
1.2
1.5 â¦
VDS = 60 V, ID = 0.5ID25, pulse test
1.9
S
-55
+175 °C
175
°C
-55
+175 °C
Features
⢠Isolated Substrate
â high isolation voltage (>2500V)
â excellent thermal transfer
â Increased temperature and power
cycling capability
⢠IXYS advanced low Qg process
⢠Low gate charge and capacitances
â easier to drive
â faster switching
⢠Low RDS(on)
⢠Very low insertion inductance (<2nH)
⢠No beryllium oxide (BeO) or other
hazardous materials
Advantages
⢠Optimized for RF and high speed
switching at frequencies to >100MHz
⢠Easy to mountâno insulators needed
⢠High power density
1.6mm (0.063 in) from case for 10 s
300
°C
2
g
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