CS20-22MOF1 Datasheet, PDF (1/2 Pages) IXYS Corporation – High Voltage Phase Control Thyristorin High Voltage ISOPLUS i4-PAC-TM

Advanced Technical Information
CS 20-22moF1
High Voltage
Phase Control
Thyristor
in High Voltage
ISOPLUS i4-PAC^TM
V_RSM
V_DSM
V
2100
V_RRM
V_DRM
V
2000
Type
CS 20-22moF1
V = V = 2200 V
DRM RRM
I_T(AV)
= 18 A
I_TSM
= 200 A
1
5
Thyristors
Symbol
V_DRM, V_RRM
I_T(AV)
I_T(AV)
I_TSM
(di/dt)_cr
(dv/dt)_cr
Conditions
sine 180°; T_C = 90°C
square; d = ¹/₃; T_C = 90°C
sine 180°; t = 10 ms; V_R = 0 V; T_VJ = 25°C
T_VJ = T_VJM
repetitive, I_T = 40 A
f = 50 Hz, t_P = 200 µs
V_D = ²/₃ V_DRM
I_G = 0.45 A
di_G/dt = 0.45 A/µs
non repetitive, I_T = 20 A
T_VJ = T_VJM;
V_DR = ²/₃ V_DRM
R_GK = ¥; method 1 (linear voltage rise)
Maximum Ratings
2200
V
18
A
16
A
200
A
100 A/µs
250 A/µs
2500 V/µs
Symbol
V_T
V_GT
I_GT
V_GD
I_GD
I_L
I_H
t_gd
I_R, I_D
R_thJC
Conditions
Characteristic Values
(T_VJ = 25°C, unless otherwise specified)
min. typ. max.
I_T = 20 A; T_VJ = 25°C
T_VJ =125°C
V_D = 6 V
1.3 1.5 V
1.3
V
2.3 V
250 mA
T_VJ = T_VJM; V_D = ²/₃ V_DRM
0.2 V
5 mA
t_P = 10 ms; V_D = 6 V
I_G = 0.45 A; di_G/dt = 0.45 A/µs
V_D = 6 V; R_GK = ¥
V_D = ½ V_DRM
I_G = 0.45 A; di_G/dt = 0.45 A/µs
V_R = V_RRM; V_D = V_DRM;T_VJ = 25°C
T_VJ = 125°C
DC current
500 mA
150 mA
2 µs
50 µA
2
mA
0.92 K/W
Features
• high voltage thyristor
- for line frequency
- chip technology for long term
stability
• ISOPLUS i4-PAC^TM
high voltage package
- isolated back surface
- enlarged creepage towards heatsink
- enlarged creepage between high
voltage pins
- application friendly pinout
- high reliability
- industry standard outline
Applications
• controlled rectifiers
- power supplies
- drives
• AC switches
• capacitor discharge control
- flash tubes
- x ray and laser generators
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
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