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| CPC3982 Datasheet, PDF (1/5 Pages) IXYS Corporation – N-Channel Depletion-Mode | |||
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INTEGRATED CIRCUITS DIVISION
PRELIMINARY
CPC3982
N-Channel Depletion-Mode
Vertical DMOS FET
V(BR)DSX /
V(BR)DGX
800V
RDS(on)
(max)
380ï
IDSS (min)
20mA
Package
SOT-23
Features
⢠High Breakdown Voltage: 800V
⢠Low VGS(off) Voltage: -1.4V to -3.1V
⢠Depletion Mode Device Offers Low RDS(on)
at Cold Temperatures
⢠High Input Impedance
⢠Small Package Size: SOT-23
Applications
⢠Constant Current Regulator
⢠Ignition Modules
⢠Normally-On Switches
⢠Solid State Relays
⢠Converters
⢠Telecommunications
⢠Power Supply
Description
The CPC3982 is an N-channel, depletion mode, field
effect transistor (FET) that utilizes IXYS Integrated
Circuits Divisionâs proprietary third-generation vertical
DMOS process. The third-generation process realizes
world class, high voltage MOSFET performance
in an economical silicon gate process. Our vertical
DMOS process yields a robust device, with high
input impedance, for use in high-power applications.
The CPC3982 is a highly reliable device that has
been used extensively in our Solid State Relays for
industrial and telecommunications applications.
This device excels in power applications that require
low drain-source resistance, particularly in cold
environments such as automotive ignition modules.
The CPC3982 has a minimum breakdown voltage of
800V, and is available in an SOT-23 package. As with
all MOS devices, the FET structure prevents thermal
runaway and thermal-induced secondary breakdown.
Ordering Information
Part #
CPC3982TTR
Description
N-Channel Depletion Mode FET, SOT-23 Pkg.
Tape and Reel (3000/Reel)
Package Pinout
D
3
1
2
G
S
(SOT-23)
Circuit Symbol
D
G
S
DS-CPC3982-R00D
PRELIMINARY
1
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