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| CPC3730 Datasheet, PDF (1/5 Pages) Clare, Inc. – N-Channel Depletion-Mode FET | |||
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INTEGRATED CIRCUITS DIVISION
V(BR)DSX /
V(BR)DGX
350VP
RDS(on)
(max)
30ï
IDSS (min)
140mA
Features
⢠Low RDS(on) at Cold Temperatures
⢠RDS(on) 30ï max. at 25ºC
⢠High Input Impedance
⢠High Breakdown Voltage: 350VP
⢠Low VGS(off) Voltage: -1.6 to -3.9V
⢠Small Package Size: SOT-89
Applications
⢠Ignition Modules
⢠Normally-On Switches
⢠Solid State Relays
⢠Converters
⢠Telecommunications
⢠Power Supply
PRELIMINARY
CPC3730
350V N-Channel
Depletion-Mode FET
Package
SOT-89
Description
The CPC3730 is an N-channel, depletion mode, field
effect transistor (FET) that utilizes IXYS Integrated
Circuits Divisionâs proprietary third-generation vertical
DMOS process. The third-generation process realizes
world class, high voltage MOSFET performance
in an economical silicon gate process. Our vertical
DMOS process yields a robust device, with high input
impedance, for use in high power applications. The
CPC3730 is a highly reliable FET device that has
been used extensively in our solid state relays for
industrial and telecommunications applications.
This device excels in power applications requiring
low drain-source resistance, particularly in cold
environments such as automotive ignition modules.
The CPC3730 offers a low, 30ï maximum, on-state
resistance at 25ºC.
The CPC3730 has a minimum breakdown voltage
of 350VP , and is available in an SOT-89 package.
As with all MOS devices, the FET structure prevents
thermal runaway and thermal-induced secondary
breakdown.
Ordering Information
Part #
CPC3730CTR
Description
N-Channel Depletion Mode FET, SOT-89 Pkg.
Tape and Reel (1000/Reel)
Package Pinout
D
G
D
S
(SOT-89)
Circuit Symbol
D
G
S
DS-CPC3730-R00K
PRELIMINARY
1
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