CPC3714 Datasheet, PDF (1/5 Pages) Clare, Inc. – N-Channel Depletion-Mode FET

INTEGRATED CIRCUITS DIVISION
V_(BR)DSX /
V_(BR)DGX
350V_P
R_DS(on)
(max)
14
I_DSS (min)
240mA
Package
SOT-89
Features
• Offers Low R_DS(on) at Cold Temperatures
• R_DS(on) 14 max. at 25ºC
• High Input Impedance
• High Breakdown Voltage: 350V
• Low V_GS(off) Voltage: -1.6 to -3.9V
• Small Package Size: SOT-89
Applications
• Ignition Modules
• Normally-On Switches
• Solid State Relays
• Converters
• Telecommunications
• Power Supply
Package Pinout
D
G
D
S
(SOT-89)
CPC3714
350V N-Channel
Depletion-Mode FET
Description
The CPC3714 is an N-channel, depletion-mode, field
effect transistor (FET) that utilizes IXYS Integrated
Circuits Division’s proprietary third-generation vertical
DMOS process. The third-generation process realizes
world class, high voltage MOSFET performance
in an economical silicon gate process. Our vertical
DMOS process yields a robust device, with high input
impedance, for use in high power applications. The
CPC3714 is a highly reliable FET device that has
been used extensively in our solid state relays for
industrial and telecommunications applications.
This device excels in power applications requiring
low drain-source resistance, particularly in cold
environments such as automotive ignition modules.
The CPC3714 offers a low, 14 maximum, on-state
resistance at 25ºC.
The CPC3714 has a minimum breakdown voltage of
350V_P and is available in an SOT-89 package. As with
all MOS devices, the FET structure prevents thermal
runaway and thermal-induced secondary breakdown.
Ordering Information
Part #
CPC3714CTR
Description
N-Channel Depletion Mode FET, SOT-89 Pkg.
Tape and Reel (1000/Reel)
Circuit Symbol
D
G
S
DS-CPC3714-R02
www.ixysic.com
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