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| CPC3708 Datasheet, PDF (1/6 Pages) IXYS Corporation – Depletion Mode FET | |||
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INTEGRATED CIRCUITS DIVISION
Parameter
Drain-to-Source Voltage - V(BR)DSX
Max On-Resistance - RDS(on)
Max Power
SOT-89 Package
SOT-223 Package
Rating
350
14
1.1
2.5
Units
V
ï
W
Features
⢠350V Drain-to-Source Voltage
⢠Depletion Mode Device Offers Low RDS(on)
at Cold Temperatures
⢠Low On-Resistance: 8ï (Typical) @ 25°C
⢠Low VGS(off) Voltage
⢠High Input Impedance
⢠Low Input and Output Leakage
⢠Small Package Size SOT-89 and SOT-223
⢠PC Card (PCMCIA) Compatible
⢠PCB Space and Cost Savings
Applications
⢠LED Drive Circuits
⢠Telecommunications
⢠Normally On Switches
⢠Ignition Modules
⢠Converters
⢠Security
⢠Power Supplies
⢠Regulators
Circuit Symbol
D
G
S
CPC3708
350V N-Channel
Depletion Mode FET
Description
The CPC3708 is a N-channel, depletion mode Field
Effect Transistor (FET) that is available in an
SOT-223 package (CPC3708Z) and an SOT-89
package (CPC3708C). Both utilize IXYS Integrated
Circuits Divisionâs proprietary third-generation
vertical DMOS process that realizes world class,
high voltage MOSFET performance in an economical
silicon gate process. The vertical DMOS process
yields a highly reliable device, particularly for
use in difficult application environments such as
telecommunications, security, and power supplies.
CPC3708Z and the CPC3708C have a typical
on-resistance of 8ï and a drain-to-source voltage
of 350V. As with all MOS devices, the FET structure
prevents thermal runaway and thermally induced
secondary breakdown.
Ordering Information
Part Number
CPC3708CTR
CPC3708ZTR
Description
SOT-89: Tape and Reel (1000/Reel)
SOT-223: Tape and Reel (1000/Reel)
Package Pinout:
D
4
123
GDS
Pin Number
1
2
3
4
Name
GATE
DRAIN
SOURCE
DRAIN
DS-CPC3708-R03
www.ixysic.com
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