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| CPC3703 Datasheet, PDF (1/5 Pages) Clare, Inc. – N-Channel Depletion-Mode Vertical DMOS FETs | |||
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INTEGRATED CIRCUITS DIVISION
V(BR)DSX /
V(BR)DGX
250V
RDS(on)
(max)
4ï
IDSS (min)
360mA
Package
SOT-89
Features
⢠High Breakdown Voltage: 250V
⢠Low On-Resistance: 4ï max. at 25ºC
⢠Low VGS(off) Voltage: -1.6 to -3.9V
⢠Depletion Mode Device Offers Low RDS(on)
at Cold Temperatures
⢠High Input Impedance
⢠Small Package Size: SOT-89
Applications
⢠Ignition Modules
⢠Normally-On Switches
⢠Solid State Relays
⢠Converters
⢠Telecommunications
⢠Power Supply
Package Pinout
D
G
D
S
(SOT-89)
CPC3703
250V N-Channel
Depletion-Mode FET
Description
The CPC3703 is an N-channel, depletion mode, field
effect transistor (FET) that utilizes IXYS Integrated
Circuits Divisionâs proprietary third-generation vertical
DMOS process. The third-generation process realizes
world class, high voltage MOSFET performance
in an economical silicon gate process. Our vertical
DMOS process yields a robust device, with high
input impedance, for use in high-power applications.
The CPC3703 is a highly reliable device that has
been used extensively in our Solid State Relays for
industrial and telecommunications applications.
This device excels in power applications that require
low drain-source resistance, particularly in cold
environments such as automotive ignition modules.
The CPC3703 offers a low, 4ï maximum, on-state
resistance at 25ºC.
The CPC3703 has a minimum breakdown voltage of
250V, and is available in an SOT-89 package. As with
all MOS devices, the FET structure prevents thermal
runaway and thermal-induced secondary breakdown.
Ordering Information
Part #
CPC3703CTR
Description
N-Channel Depletion Mode FET, SOT-89 Pkg.
Tape and Reel (1000/Reel)
Circuit Symbol
D
G
S
DS-CPC3703-R07
www.ixysic.com
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