99227 Datasheet, PDF (1/5 Pages) IXYS Corporation – PolarHV Power MOSFET

Advanced Technical Information
PolarHV^TM
Power MOSFET
Electrically Isolated Tab,
N-Channel Enhancement Mode,
Avalanche Rated
IXTC 26N50P
V_DSS =
I_D25 =
R_DS(on) =
500 V
13 A
260 mΩ
Symbol
Test Conditions
Maximum Ratings
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_DM
I_AR
E_AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
V_ISOL
F_C
Weight
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/µs, V_DD ≤ V_DSS,
T_J ≤ 150°C, R_G = 4 Ω
T_C = 25°C
1.6 mm (0.062 in.) from case for 10 s
50/60 Hz, RMS, t = 1, leads-to-tab
Mounting Force
500
500
±20
±30
13
78
26
40
1.0
10
100
-55 ... +150
150
-55 ... +150
300
2500
11..65/2.5..15
2
V
V
V
V
A
A
A
mJ
J
V/ns
W
°C
°C
°C
°C
V~
N/lb
g
Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
V_DSS
V_GS = 0 V, I_D = 250 µA
Characteristic Values
Min. Typ. Max.
500
V
V_GS(th)
V_DS = V_GS, I_D = 250µA
2.5
5.0 V
I_GSS
V_GS = ±30 V_DC, V_DS = 0
±100 nA
I_DSS
V_DS = V_DSS
V_GS = 0 V
T_J = 125°C
25 µA
250 µA
R_DS(on)
V_GS = 10 V, I_D = I_T
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
260 mΩ
ISOPLUS220^TM (IXTC)
E153432
G
DS
Isolated Tab
G = Gate
S = Source
D = Drain
Features
z _{Silicon chip on Direct-Copper-Bond}
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
z _{Low drain to tab capacitance(<30pF)}
Applications
z _{DC-DC converters}
z _{Battery chargers}
z _{Switched-mode and resonant-mode}
power supplies
z _{DC choppers}
z _{AC motor control}
Advantages
z _{Easy assembly}
z _{Space savings}
z _{High power density}
© 2004 IXYS All rights reserved
DS99227(10/04)