98984 Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerFET Power MOSFETs Q-Class

Advanced Technical Information
HiPerFET^TM
Power MOSFETs
Q-Class
IXFK 60N55Q2
IXFX 60N55Q2
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Q_g
Low intrinsic R_g, low t_rr
V_DSS = 550 V
I_D25
= 60 A
R_DS(on) = 88 mΩ
t_rr ≤ 250 ns
Symbol
V_DSS
V_DGR
V
GS
V_GSM
I
D25
I_DM
I_AR
E_AR
E_AS
dv/dt
P
D
T_J
T
JM
T_stg
T
L
M_d
Weight
Symbol
V_DSS
V_GS(th)
I_GSS
I_DSS
R
DS(on)
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T
C
= 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/µs, V_DD ≤ V_DSS,
T_J ≤ 150°C, R_G = 2 Ω
T
C
= 25°C
1.6 mm (0.063 in) from case for 10 s
Maximum Ratings
550
V
550
V
±30
V
±40
V
60
A
240
A
60
A
75
mJ
4.0
J
20
V/ns
735
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
Mounting torque
TO-264
0.9/6 Nm/lb.in.
PLUS-247
TO-264
6
g
10
g
PLUS 247^TM (IXFX)
D (TAB)
G
D
TO-264 AA (IXFK)
G
D
S
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Test Conditions
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
V_GS = 0 V, I_D = 3mA
550
V_DS = V_GS, I_D = 8 mA
2.0
V_GS = ±20 V_DC, V_DS = 0
V_DS = V_DSS
V_GS = 0 V
T_J = 25°C
T_J = 125°C
V = 10 V, I = 0.5 • I
GS
D
D25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
V
4.5 V
±200 nA
50 µA
2 mA
88 mΩ
Features
z _{Double metal process for low gate}
resistance
z _{International standard packages}
z _{Epoxy meet UL 94 V-0, flammability}
classification
z _{Avalanche energy and current rated}
z _{Fast intrinsic Rectifier}
Advantages
z _{Easy to mount}
z _{Space savings}
z _{High power density}
© 2002 IXYS All rights reserved
DS98984(12/02)