98822 Datasheet, PDF (1/2 Pages) IXYS Corporation – High Voltage MOSFET

High Voltage MOSFET
N-Channel Enhancement Mode
Avalanche Energy Rated
Preliminary Data
IXTA 1N80
IXTP 1N80
IXTY 1N80
V
DSS
I_D25
R_DS(on)
= 800 V
= 750 mA
= 11 Ω
Symbol
Test Conditions
V
DSS
V_DGR
V_GS
V_GSM
I_D25
I
DM
T
J
= 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25°C
T
C
=
25°C,
pulse
width
limited
by
T
JM
I
AR
E_AR
E_AS
dv/dt
P_D
T_J
T
JM
T_stg
M_d
Weight
T_C = 25°C
T_C = 25°C
I
S
≤
I,
DM
di/dt
≤
100
A/µs,
V
DD
≤
V,
DSS
T_J ≤ 150°C, R_G = 47 Ω
T_C = 25°C
Mounting torque
TO-220
TO-252
TO-263
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
800
V
800
V
±20
V
±30
V
750
mA
3
A
1.0
A
5
mJ
100
mJ
3
V/ns
40
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
1.13/10 Nm/lb.in.
4
g
0.8
g
3
g
300
°C
Symbol
V_DSS
V_GS(th)
I
GSS
I_DSS
R_DS(on)
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
V_GS = 0 V, I_D = 250 µA
V_DS = V_GS, I_D = 25 µA
800
V
2.5
4.5 V
V
GS
=
±20
V,
DC
V
DS
=
0
±100 nA
V_DS = V_DSS
V_GS = 0 V
T_J = 25°C
T_J = 125°C
25 µA
500 µA
V_GS = 10 V, I_D = 500 mA
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
9.5
11 Ω
© 2003 IXYS All rights reserved
TO-220AB (IXTP)
GDS
TO-263 AA (IXTA)
D (TAB)
G
S
TO-252 AA (IXTY)
D (TAB)
G
S
D (TAB)
G = Gate,
S = Source,
D = Drain,
TAB = Drain
Features
! International standard packages
! High voltage, Low R_{DS (on)} HDMOS^TM
process
! Rugged polysilicon gate cell structure
! Fast switching times
Applications
! Switch-mode and resonant-mode
power supplies
! Flyback inverters
! DC choppers
! High frequency matching
Advantages
! Space savings
! High power density
DS98822C(11/03)