80N60B Datasheet, PDF (1/2 Pages) IXYS Corporation – High Current IGBT

High Current IGBT
Short Circuit SOA Capability
IXSK 80N60B
IXSX 80N60B
V_CES =
I_C25 =
= V_CE(sat)
600 V
160 A
2.5 V
Symbol
V
CES
V_CGR
V
CES
V_GEM
I
C25
I_C90
I
L(RMS)
I_CM
SSOA
(RBSOA)
tsc
SCSOA
P_C
T_J
T_JM
T_stg
T_L
M_d
Weight
Symbol
BV_CES
V_GE(th)
I_CES
I_GES
V_CE(sat)
Test Conditions
Maximum Ratings
T
J
= 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
600
V
600
V
±20
V
±30
V
T
C
=
25°C
T_C = 90°C
T
C
=
90°C
T_C = 25°C, 1 ms
(silicon chip capability)
(silicon chip capability)
(silicon chip capability)
V_GE = 15 V, T_VJ = 125°C, R_G = 5 Ω
Clamped inductive load
V_GE = 15 V, V_CE = 0.6 V_CES, T_J = 125°C
R
G
=
5
Ω,
non-repetitive
T_C = 25°C
1.6 mm (0.063 in.) from case for 10 s
Mounting torque TO-264
160
A
80
A
75
A
300
A
I_CM = 160
A
@ 0.8 V
CES
10
µs
500
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
0.4/6 Nm/lb.in.
PLUS 247
TO-264
6
g
10
g
PLUS 247^TM
(IXSX)
G
C
E
TO-264 AA
(IXSK)
(TAB)
G
C
E
(TAB)
G = Gate
C = Collector
E = Emitter
TAB = Collector
Features
! _{International standard packages}
! _{Very high current, fast switching IGBT}
! _{Low V}
CE(sat)
- for minimum on-state conduction
losses
! _{MOS Gate turn-on}
- drive simplicity
Test Conditions
I_C = 500 µA, V_GE = 0 V
I_C = 8 mA, V_CE = V_GE
V_CE = V_CES
V =0V
GE
V_CE = 0 V, V_GE = ±20 V
I_C = I_C90, V_GE = 15 V
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
600
V
4
8V
T_J = 25°C
T
J
=
125°C
200 µA
2 mA
±200 nA
2.5 V
Applications
! _{AC motor speed control}
! _{DC servo and robot drives}
! _{DC choppers}
! _{Uninterruptible power supplies (UPS)}
! _{Switch-mode and resonant-mode}
power supplies
Advantages
! _{PLUS 247}TM _{package for clip or spring}
mounting
! _{Space savings}
! _{High power density}
© 2002 IXYS All rights reserved
98721B (07/02)