6N80 Datasheet, PDF (1/4 Pages) IXYS Corporation – N-Channel Enhancement Mode

Standard
Power MOSFET
N-Channel Enhancement Mode
V_DSS
IXTH/IXTM 6 N80 800 V
IXTH/IXTM 6 N80A 800 V
I_D25
R_DS(on)
6 A 1.8 Ω
6 A 1.4 Ω
Symbol
Test Conditions
Maximum Ratings
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_DM
P
D
T_J
T
JM
T_stg
M_d
Weight
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
800
V
800
V
±20
V
±30
V
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T
C
= 25°C
6
A
24
A
180
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
Mounting torque
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°C
Symbol
V_DSS
V
GS(th)
I
GSS
I
DSS
R_DS(on)
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
V_GS = 0 V, I_D = 3 mA
800
V
DS
=
V,
GS
I
D
=
250
µA
2
V
GS
=
±20
V,
DC
V
DS
=
0
V = 0.8 • V
DS
DSS
V_GS = 0 V
T
J
=
25°C
T_J = 125°C
V_GS = 10 V, I_D = 0.5 I_D25 6N80
6N80A
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
V
4.5 V
±100 nA
250 µA
1 mA
1.8 Ω
1.4 Ω
TO-247 AD (IXTH)
D (TAB)
TO-204 AA (IXTM)
G = Gate,
S = Source,
G
D = Drain,
TAB = Drain
Features
q _{International standard packages}
q _{Low R}
HDMOS^TM process
DS (on)
q _{Rugged polysilicon gate cell structure}
q _{Low package inductance (< 5 nH)}
- easy to drive and to protect
q _{Fast switching times}
Applications
q _{Switch-mode and resonant-mode}
power supplies
q _{Motor controls}
q _{Uninterruptible Power Supplies (UPS)}
q _{DC choppers}
Advantages
q _{Easy to mount with 1 screw (TO-247)}
(isolated mounting screw hole)
q _{Space savings}
q _{High power density}
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS Corporation
3540 Bassett Street, Santa Clara,CA 95054
Tel: [phone] Fax: [phone]
91542E(5/96)
IXYS Semiconductor
Edisonstr. 15, D-68623 Lampertheim, Germany
Tel: [phone] Fax: [phone]