IS61NLP6432A Datasheet, PDF (9/21 Pages) Integrated Silicon Solution, Inc – 64K x 32, 64K x 36, and 128K x 18 2Mb, PIPELINE (NO WAIT) STATE BUS SRAM

IS61NLP6432A
IS61NLP6436A/IS61NVP6436A
IS61NLP12818A/IS61NVP12818A
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter
VOH
Output HIGH Voltage
VOL
Output LOW Voltage
VIH
Input HIGH Voltage
VIL
Input LOW Voltage
ILI
Input Leakage Current
ILO
Output Leakage Current
Test Conditions
IOH = –4.0 mA (3.3V)
IOH = –1.0 mA (2.5V)
IOL = 8.0 mA (3.3V)
IOL = 1.0 mA (2.5V)
VSS ≤ VIN ≤ VDD⁽¹⁾
VSS ≤ VOUT ≤ VDDQ, OE = VIH
3.3V
Min.
Max.
2.4
—
—
0.4
2.0 VDD + 0.3
–0.3
0.8
–5
5
–5
5
ISSI ^®
2.5V
Min.
Max.
Unit
2.0
—
V
—
0.4
V
1.7 VDD + 0.3
V
–0.3
0.7
V
–5
5
µA
–5
5
µA
POWER SUPPLY CHARACTERISTICS⁽¹⁾ (Over Operating Range)
Symbol Parameter
Test Conditions
Temp. range
-250
MAX
x18 x32/x36
-200
MAX
x18 x32/x36
Unit
ICC
AC Operating
Device Selected,
Com.
Supply Current
OE = VIH, ZZ ≤ VIL,
Ind.
All Inputs ≤ 0.2V or ≥ VDD – 0.2V,
Cycle Time ≥ tKC min.
225 225
250 250
200 200
mA
210 210
ISB
Standby Current Device Deselected,
TTL Input
VDD = Max.,
All Inputs ≤ VIL or ≥ VIH,
ZZ ≤ VIL, f = Max.
Com.
Ind.
90 90
100 100
90 90
mA
100 100
ISBI
Standby Current Device Deselected,
Com.
CMOS Input
VDD = Max.,
Ind.
VIN ≤ VSS + 0.2V or ≥VDD – 0.2V typ.⁽²⁾
f=0
70 70
75 75
40
70 70
mA
75 75
40
ISB2
Sleep Mode
ZZ>VIH
Com.
Ind.
typ.⁽²⁾
30 30
35 35
20
30 30
mA
35 35
20
Note:
1. MODE pin has an internal pullup and should be tied to VDD or VSS. It exhibits ±100µA maximum leakage current when tied to ≤
VSS + 0.2V or ≥ VDD – 0.2V.
2. Typical values are measured at VDD = 3.3V, TA = 25^oC and not 100% tested.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
9
Rev. 00A
08/31/05