IS61NLP102436A Datasheet, PDF (9/22 Pages) Integrated Silicon Solution, Inc – 1Mb x 36 and 2Mb x 18 STATE BUS SRAM

IS61NLP102436A/IS61NVP102436A
IS61NLP204818A/IS61NVP204818A
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter
VOH
Output HIGH Voltage
VOL
Output LOW Voltage
VIH
Input HIGH Voltage
VIL
Input LOW Voltage
ILI
Input Leakage Current
ILO
Output Leakage Current
Test Conditions
IOH = –4.0 mA (3.3V)
IOH = –1.0 mA (2.5V)
IOL = 8.0 mA (3.3V)
IOL = 1.0 mA (2.5V)
VSS ≤ VIN ≤ VDD⁽¹⁾
VSS ≤ VOUT ≤ VDDQ, OE = VIH
3.3V
2.5V
Min.
Max.
Min.
Max.
Unit
2.4
—
2.0
—
V
—
0.4
—
0.4
V
2.0 VDD + 0.3
1.7 VDD + 0.3
V
–0.3
0.8
–0.3
0.7
V
–5
5
–5
5
µA
–5
5
–5
5
µA
POWER SUPPLY CHARACTERISTICS⁽¹⁾ (Over Operating Range)
Symbol Parameter
Test Conditions
Temp. range
-200
MAX
x18 x36
-166
MAX
x18 x36
Unit
ICC
AC Operating
Device Selected,
Com.
Supply Current
OE = VIH, ZZ ≤ VIL,
Ind.
All Inputs ≤ 0.2V or ≥ VDD – 0.2V, typ.⁽²⁾
Cycle Time ≥ tKC min.
450 450
475 475
390
400 400
mA
450 450
340
ISB
Standby Current Device Deselected,
TTL Input
VDD = Max.,
All Inputs ≤ VIL or ≥ VIH,
ZZ ≤ VIL, f = Max.
Com.
260 260
Ind.
270 270
250 250
mA
260 260
ISBI
Standby Current Device Deselected,
CMOS Input
VDD = Max.,
VIN ≤ VSS + 0.2V or ≥VDD – 0.2V
f=0
Com.
Ind.
typ.⁽²⁾
105 105
110 110
30
105 105
mA
110 110
30
Note:
1. MODE pin has an internal pullup and should be tied to VDD or VSS. It exhibits ±100µA maximum leakage current when tied to ≤
VSS + 0.2V or ≥ VDD – 0.2V.
2. Typical values are measured at Vcc = 3.3V, TA = 25^oC and not 100% tested.
Integrated Silicon Solution, Inc. — www.issi.com
9
Rev. A
09/13/07