IS66WV1M16DALL Datasheet, PDF (7/15 Pages) Integrated Silicon Solution, Inc – 16Mb LOW VOLTAGE, ULTRA LOW POWER PSEUDO CMOS STATIC RAM

IS66WV1M16DALL
IS66WV1M16DBLL
2.5V-3.6V POWER SUPPLY CHARACTERISTICS (Over Operating Range)
Symbol Parameter
Test Conditions

Icc
Vdd Dynamic Operating Vdd = Max.,
Com.

Supply Current
Iout = 0 mA, f = fmax
Ind.

All Inputs 0.4V
Auto.

or Vdd – 0.3V
typ.⁽²⁾
Icc1

Operating Supply
Current
Vdd = Max., CS1 = 0.2V
WE = Vdd – 0.2V
Com.
Ind.

CS2 = Vdd – 0.2V, f = 1mhz Auto.
Isb1 TTL Standby Current Vdd = Max.,
Com.

(TTL Inputs)

Vin = Vih or Vil
CS1 = Vih , CS2 = Vil,
Ind.
Auto.

f = 1 MHz
Max. Unit
55ns
25
mA
28
35
15
5
mA
5
10
0.6
mA
0.6
1

OR

ULB Control

Vdd = Max., Vin = Vih or Vil
CS1 = Vil, f = 0, UB = Vih, LB = Vih
Isb2 CMOS Standby

Current (CMOS Inputs)



Vdd = Max.,
CS1 ≥ Vdd – 0.2V,
CS2 ≤ 0.2V,
Vin ≥ Vdd – 0.2V, or
Vin ≤ 0.2V, f = 0
Com. 100
µA
Ind. 130
Auto. 150
typ.⁽²⁾
75

OR

ULB Control


Vdd = Max., CS1 = Vil, CS2=Vih
Vin ≥ Vdd – 0.2V, or Vin ≤ 0.2V, f = 0;
UB / LB = Vdd – 0.2V
Note:
1. At f = fmax, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at Vdd = 3.0V, Ta = 25^oC and not 100% tested.
Integrated Silicon Solution, Inc. — www.issi.com
7
Rev.  00A
02/04/2011