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IS41C4405X Datasheet, PDF (7/17 Pages) Integrated Silicon Solution, Inc – 4M x 4 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE
IS41C4405X
IS41LV4405X SERIES
ISSI ®
AC CHARACTERISTICS (Continued)(1,2,3,4,5,6)
(Recommended Operating Conditions unless otherwise noted.)
Symbol
tRWL
tCWL
tWCS
tDHR
tACH
tOEH
tDS
tDH
tRWC
tRWD
tCWD
tAWD
tPC
tRASP
tCPA
tPRWC
tCOH
tOFF
tWHZ
tCSR
tCHR
tORD
tREF
tT
Parameter
Write Command to RAS Lead Time(17)
Write Command to CAS Lead Time(17, 21)
Write Command Setup Time(14, 17, 20)
Data-in Hold Time (referenced to RAS)
Column-Address Setup Time to CAS
Precharge during WRITE Cycle
OE Hold Time from WE during
READ-MODIFY-WRITE cycle(18)
Data-In Setup Time(15, 22)
Data-In Hold Time(15, 22)
READ-MODIFY-WRITE Cycle Time
RAS to WE Delay Time during
READ-MODIFY-WRITE Cycle(14)
CAS to WE Delay Time(14, 20)
Column-Address to WE Delay Time(14)
Fast Page Mode READ or WRITE
Cycle Time
RAS Pulse Width
Access Time from CAS Precharge(15)
READ-WRITE Cycle Time(24)
Data Output Hold after CAS LOW
Output Buffer Turn-Off Delay from
CAS or RAS(13,15,19, 24)
Output Disable Delay from WE
CAS Setup Time (CBR REFRESH)(20, 25)
CAS Hold Time (CBR REFRESH)( 21, 25)
OE Setup Time prior to RAS during
HIDDEN REFRESH Cycle
Auto Refresh Period 2,048 Cycles
4,096 Cycles
Transition Time (Rise or Fall)(2, 3)
-50
Min. Max.
13
—
8
—
0
—
39
—
15
—
8
—
0
—
8
—
108
—
64
—
26
—
39
—
20
—
50
100K
—
30
56
—
5
—
0
12
3
10
5
—
8
—
0
—
—
32
—
64
1
50
-60
Min. Max.
15
—
10
—
0
—
39
—
15
—
10
—
0
—
10
—
133
—
77
—
32
—
47
—
25
—
60
100K
—
35
68
—
5
—
0
15
3
10
5
—
10
—
0
—
—
32
—
64
1
50
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ns
AC TEST CONDITIONS
Output load: Two TTL Loads and 50 pF (Vcc = 5.0V ±10%)
One TTL Load and 50 pF (Vcc = 3.3V ±10%)
Input timing reference levels: VIH = 2.4V, VIL = 0.8V (Vcc = 5.0V ±10%);
VIH = 2.0V, VIL = 0.8V (Vcc = 3.3V ±10%)
Output timing reference levels: VOH = 2.0V, VOL = 0.8V (Vcc = 5V ±10%, 3.3V ±10%)
Integrated Silicon Solution, Inc. — 1-800-379-4774
7
Rev. C
06/24/01