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IS61WV12816DALL Datasheet, PDF (6/21 Pages) Integrated Silicon Solution, Inc – 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM | |||
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IS61WV12816DALL/DALS, IS61WV12816DBLL/DBLS,
IS64WV12816DBLL/DBLS
ABSOLUTE MAXIMUM RATINGS(1)
Symbol Parameter
Value
Unit
VTERM Terminal Voltage with Respect to GND â0.5 to VDD + 0.5 V
VDD
VDD Relates to GND
â0.3 to 4.0
V
TSTG
Storage Temperature
â65 to +150
°C
PT
Power Dissipation
1.0
W
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage
to the device. This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
CAPACITANCE(1,2)
Symbol Parameter
Conditions
Max.
Unit
CIN
Input Capacitance
VIN = 0V
6
pF
CI/O
Input/Output Capacitance
VOUT = 0V
8
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25°C, f = 1 MHz, VDD = 3.3V.
6
Integrated Silicon Solution, Inc. â www.issi.com
Rev. C
05/01/08
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