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IS42S16100A1 Datasheet, PDF (55/79 Pages) Integrated Silicon Solution, Inc – 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S16100A1
ISSI ®
Write Cycle / Precharge Termination
T0
T1
T2
T3
T4
T5
T6
T7
CLK
tCKS
CKE
tCS
CS
RAS
tCHI
tCK
tCL
tCKA
tCH
tCS
tCH
CAS
WE
A0-A9
tCS
tCH
tCS
tCH
tAS
tAH
ROW
(1)
COLUMN m
tAS
tAH
A10
ROW
tAS
tAH
NO PRE
BANK 0 OR 1
A11
BANK 0
BANK 0
BANK 0
tCS
tCH
tCS tCH
DQM
tDH
tDH
tDH
tDS
tDS
tDS
DQ
DIN 0m
DIN 0m+1
DIN 0m+2
tRCD
tRAS
tRC
<ACT 0>
<WRIT 0>
tRP
<PRE 0>
T8
T9
T10
ROW
ROW
BANK 1
BANK 0
tRCD
tRAS
tRC
<ACT >
(1)
COLUMN n
AUTO PRE
NO PRE
BANK 1
BANK 0
tCS
tDH
tDS
DIN 0n
<WRIT>
<WRITA>
CAS latency = 2, burst length = 4
Note 1: A8,A9 = Don’t Care.
Undefined
Don't Care
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
55
Rev. C
08/12/03