IS93C46-3 Datasheet, PDF (5/10 Pages) Integrated Silicon Solution, Inc – 1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM

IS93C46-3
ISSI ^®
DC ELECTRICAL CHARACTERISTICS
TA = 0°C to +70°C for IS93C46-3 and –40°C to +85°C for IS93C46-3I.
Symbol
VOL
VOL1
VOH
VOH1
VIH
Parameter
Output LOW Voltage
Output LOW Voltage
Output HIGH Voltage
Output HIGH Voltage
Input HIGH Voltage
VIL
Input LOW Voltage
ILI
Input Leakage
ILO
Output Leakage
Test Conditions
IOL = 10 µA CMOS
IOL = 2.1 mA TTL
IOH = –10 µA CMOS
IOH = –400 µA TTL
VIN = 0V to VCC (CS, SK, DIN)
VOUT = 0V to VCC, CS = 0V
Vcc
2.7V to 3.3V
4.5V to 5.5V
2.7V to 3.3V
4.5V to 5.5V
2.7V to 3.3V
4.5V to 5.5V
2.7V to 3.3V
4.5V to 5.5V
Min.
—
—
VCC – 0.2
2.4
2.4
2
–0.1
–0.1
1
1
Max.
0.2
0.4
—
—
VCC
VCC
0.6
0.8
1
1
Unit
V
V
V
V
V
V
µA
µA
POWER SUPPLY CHARACTERISTICS
TA = 0°C to +70°C for IS93C46-3 and –40°C to +85°C for IS93C46-3I.
Symbol Parameter
Test Conditions
ICC
Vcc Operating CS = VIH, SK = 500 KHz
Supply Current CMOS Input Levels
ICC
Vcc Operating CS = VIH, SK = 1 MHz
Supply Current CMOS Input Levels
ISB
Standby Current CS = DIN = SK = 0V
Vcc
2.7V to 3.3V
4.5V to 5.5V
2.7V to 3.3V
4.5V to 5.5V
IS93C46-3
Min. Typ. Max.
— 0.5 2
IS93C46-3I
Min. Typ. Max. Unit
— 0.5 2 mA
—4 6
— 4 6 mA
— 2 10
— 10 50
— 2 10 µA
— 10 50
Integrated Silicon Solution, Inc. — 1-800-379-4774
5
Rev. G
04/26/01