IS25CQ032 Datasheet, PDF (46/53 Pages) Integrated Silicon Solution, Inc – 3V- QUAD SERIAL FLASH MEMORY MULTI- I/O SPI

IS25CQ032
PROGRAM/ERASE PERFORMANCE
Parameter
Typ Max Unit Remarks
Sector Erase Time
75 450 ms From writing erase command to erase completion
Block Erase Time
300 1500 ms From writing erase command to erase completion
Chip Erase Time
9 20 s From writing erase command to erase completion
Page Programming Time 1 4 ms From writing program command to program completion
Byte Program
8 25 us
Note: These parameters are characterized and are not 100% tested.
RELIABILITY CHARACTERISTICS⁽¹⁾
Endurance⁽²⁾
Data Retention
ESD – Human Body Model
ESD – Machine Model
Latch-Up
100,000 Cycles
20 Years
2,000 Volts
200 Volts
100 + ICC1 mA
JEDEC Standard A117
JEDEC Standard A103
JEDEC Standard A114
JEDEC Standard A115
JEDEC Standard 78
Note: These parameters are characterized and are not 100% tested
(2) 100,000 Continuous Chip and Block cycling, 100,000 Continuous Sector cycling
Table 14. Program/Erase and Reliability data
Integrated Silicon Solution, Inc.- www.issi.com
Rev. B
46
2/13/2014