IS65LV256AL_12 Datasheet, PDF (4/13 Pages) Integrated Silicon Solution, Inc – 32K x 8 LOW VOLTAGE CMOS STATIC RAM

IS65LV256AL
IS62LV256AL
POWER SUPPLY CHARACTERISTICS⁽¹⁾ (Over Operating Range)
         -20 ns     -45 ns   
Symbol Parameter
Test Conditions Min. Max. Min. Max. Unit
Icc1 Vdd Operating
Vdd = Max., CE = Vil
Com.
—4
—4
mA
Supply Current
Iout = 0 mA, f = 0
Ind.
—5
—5
Auto.
——
—8
Icc2 Vdd Dynamic Operating Vdd = Max., CE = Vil
Com.
— 20
— 10
mA
Supply Current
Iout = 0 mA, f = fmax
Ind.
— 25
— 12

Auto.
——
— 20
typ.⁽²⁾
15
7
Isb1 TTL Standby Current
(TTL Inputs)

Vdd = Max.,
Vin = Vih or Vil
CE ≥ Vih, f = 0
Com.
Ind.
Auto.
— 1.5
— 1.8
——
— 1.5 mA
— 1.8
—2
Isb2 CMOS Standby
Current (CMOS Inputs)

Vdd = Max.,
CE ≤ Vdd – 0.2V,
Vin > Vdd – 0.2V, or
Vin ≤ 0.2V, f = 0
Com.
Ind.
Auto.
typ.⁽²⁾
— 15
— 20
——
2
— 15 µA
— 20
— 50
2
Note:
1. At f = fmax, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2.Typical values are measured at Vdd = 3.3V, Ta = 25^oC and not 100% tested.
CAPACITANCE^(1,2)
Symbol Parameter
Conditions
Max.
Cin
Input Capacitance
Vin = 0V
6
Cout
Output Capacitance
Vout = 0V
5
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: Ta = 25°C, f = 1 MHz, Vdd = 3.3V.
Unit
pF
pF
4
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. C
05/09/12