IS62WV20488EALL Datasheet, PDF (4/14 Pages) Integrated Silicon Solution, Inc – TTL compatible interface levels

IS62/65WV20488EALL
IS62/65WV20488EBLL
ABSOLUTE MAXIMUM RATINGS AND OPERATING RANGE
ABSOLUTE MAXIMUM RATINGS⁽¹⁾
Symbol
Parameter
Value
Unit
Vterm
Terminal Voltage with Respect to GND
–0.2 to +3.9(V_DD+0.3V)
V
tBIAS
Temperature Under Bias
–55 to +125
C
V_DD
V_DD Related to GND
tStg
Storage Temperature
–0.2 to +3.9(V_DD+0.3V)
V
–65 to +150
C
I_OUT
DC Output Current (LOW)
20
mA
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification
is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
OPERATING RANGE⁽¹⁾
Range
Device Marking
Ambient Temperature
VDD(min) VDD(typ)
Commercial
IS62WV20488EALL 0C to +70C
1.65V
1.8V
Industrial
IS62WV20488EALL -40C to +85C
1.65V
1.8V
Automotive
IS65WV20488EALL -40C to +125C
1.65V
1.8V
Commercial
IS62WV20488EBLL 0C to +70C
2.2V
3.3V
Industrial
IS62WV20488EBLL -40C to +85C
2.2V
3.3V
Automotive
IS65WV20488EBLL -40C to +125C
2.2V
3.3V
Note:
1. Full device AC operation assumes a 100 µs ramp time from 0 to Vcc(min) and 200 µs wait time after Vcc stabilization.
VDD(max)
1.98V
1.98V
1.98V
3.6V
3.6V
3.6V
PIN CAPACITANCE ⁽¹⁾
Parameter
Symbol Test Condition
Input capacitance
DQ capacitance (IO0–IO7)
C_IN
C_I/O
T_A = 25°C, f = 1 MHz, V_DD = V_DD(typ)
Note:
1. These parameters are guaranteed by design and tested by a sample basis only.
Max Units
10 pF
10 pF
THERMAL CHARACTERISTICS ⁽¹⁾
Parameter
Thermal resistance from junction to ambient (airflow = 1m/s)
Thermal resistance from junction to case
Note:
1. These parameters are guaranteed by design and tested by a sample basis only.
Symbol
R_θJA
R_θJC
Rating
38.3
6.86
Units
°C/W
°C/W
Integrated Silicon Solution, Inc.- www.issi.com
4
Rev. A
12/12/2014