IS61LV2568L Datasheet, PDF (4/14 Pages) Integrated Silicon Solution, Inc – 256K x 8 HIGH-SPEED CMOS STATIC RAM

IS61LV2568L
ISSI ^®
POWER SUPPLY CHARACTERISTICS⁽¹⁾ (Over Operating Range)
Symbol
ICC
Parameter
VDD Operating
Supply Current
Test Conditions
VDD = Max., CE = VIL
IOUT = 0 mA, f = Max.
Com.
Ind.
typ.⁽²⁾
-8 ns
-10 ns
Min. Max. Min. Max.
Unit
— 65
— 60
mA
— 65
— 50
— 50
ISB1 TTL Standby
Current
(TTL Inputs)
VDD = Max.,
VIN = VIH or VIL
CE ≥ VIH, f = max
ISB2 CMOS Standby VDD = Max.,
Current
CE ≥ VDD – 0.2V,
(CMOS Inputs) VIN ≥ VDD – 0.2V, or
VIN ≤ 0.2V, f = 0
Com.
Ind.
Com.
Ind.
typ.⁽²⁾
— 30
— 25
mA
— 30
—3
—3
mA
—4
mA
— 700 — 700
µA
Note:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at VDD=3.3V, TA=25⁰C. Not 100% tested.
CAPACITANCE^(1,2)
Symbol
CIN
CI/O
Parameter
Input Capacitance
Input/Output Capacitance
Conditions
VIN = 0V
VOUT = 0V
Max.
Unit
6
pF
8
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25°C, f = 1 MHz, VDD = 3.3V.
4
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. C
07/25/05