IS42S83200G Datasheet, PDF (36/63 Pages) Integrated Silicon Solution, Inc – 32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM

IS42S83200G, IS42S16160G
IS45S83200G, IS45S16160G
READ - FULL-PAGE BURST
T0
CLK
T1
tCK
tCKS tCKH
CKE
tCMS tCMH
COMMAND _ACTIVE
NOP
DQM/
DQML, DQMH
A0-A9, A11, A12
A10
BA0, BA1
tAS tAH
ROW
tAS tAH
ROW
tAS tAH
BANK
DQ
tRCD
T2
T3
T4
T5
T6
Tn+1
Tn+2
Tn+3
Tn+4
tCL tCH
READ
NOP
NOP
NOP
NOP
NOP
BURST TERM
NOP
NOP
tCMS tCMH
COLUMN m⁽²⁾
BANK
tAC
tLZ
CAS Latency
tAC
tAC
tAC
tAC
tAC
DOUT m
DOUT m+1
DOUT m+2
DOUT m-1
DOUT m
tOH
tOH
tOH
tOH
tOH
each row (x16) has
512 locations⁽³⁾
Full page Full-page burst not self-terminating.
completion Use BURST TERMINATE command.
tHZ
DOUT m+1
tOH
DON'T CARE
UNDEFINED
Notes:
1) Cas latency = 2, Burst Length = Full Page
2) x16: A9, A11, and A12 = "Don't Care"
x8: A11 and A12 = "Don't Care"
3) x8: Each row has 1,024 locations.
36
Integrated Silicon Solution, Inc. — www.issi.com
Rev.  A
3/20/2012