IS43LR32800F Datasheet, PDF (35/47 Pages) Integrated Silicon Solution, Inc – 2M x 32Bits x 4Banks Mobile DDR SDRAM

IS43/46LR32800F
Figure24 : Consecutive Write to write (BL=4)
T0
T1
T2
T3
T4
T5
/CLK
CLK
Command
WRITE
NOP
WRITE
NOP
NOP
NOP
A ddress
DQS
DQ
Bank a
COL n
tDQSS
(NOM )
Bank a
COL m
DIN
D IN
DIN
D IN
n
n+1
n+2
n+3
D IN
DIN
D IN
DIN
m
m+ 1
m +2
m+ 3
DM
Don’t care
Notes:
1. Din n = Data-In from Column n.
2. Each Write command may be to any banks.
Figure25 : Non-Consecutive Write to write (BL=4)
T0
T1
T2
T3
T4
T5
/CLK
CLK
Command
WRITE
NOP
NOP
WRITE
NOP
NOP
NOP
A ddress
DQS
DQ
Bank a
COL n
tDQSS
(NOM )
Bank a
COL m
tDQSS
(NOM )
D IN
D IN
D IN
D IN
n
n+1
n+2
n+3
D IN
DIN
D IN
DIN
m
m+ 1
m +2
m+ 3
DM
Don’t care
Notes:
1. Din n = Data-In from Column n.
2. Each Write command may be to any banks.
Rev. A | February 2013
www.issi.com - [e-mail]
35