IS42S32200E Datasheet, PDF (33/59 Pages) Integrated Silicon Solution, Inc – 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

IS42S32200E, IS45S32200E
ABSOLUTE MAXIMUM RATINGS⁽¹⁾
Symbol
Parameters
Vdd max
Maximum Supply Voltage
Vddq max
Maximum Supply Voltage for Output Buffer
Vin
Input Voltage
Vout
Output Voltage
Pd max
Allowable Power Dissipation
Ics Output Shorted Current
Topr
Operating Temperature
Com.
Ind.
A1:
A2:
Tstg
Storage Temperature
Rating
–1.0 to +4.6
–1.0 to +4.6
–1.0 to +4.6
–1.0 to +4.6
1
50
0 to +70
–40 to +85
–40 to +85
–40 to +105
–55 to +150
Unit
V
V
V
V
W
mA
°C
°C
DC RECOMMENDED OPERATING CONDITIONS^(2,5)
(Ta = 0°C to +70°C for Com. grade. Ta = -40°C to +85°C for Ind. and A1 grade, Ta = -40°C to +105°C for A2 grade)
Symbol
Vdd, Vddq
Vih
Vil
Parameter
Supply Voltage
Input High Voltage⁽³⁾
Input Low Voltage⁽⁴⁾
Min.
3.0
2.0
-0.3
Typ.
Max.
Unit
3.3
3.6
V
—
Vdd + 0.3
V
—
+0.8
V
CAPACITANCE CHARACTERISTICS^(1,2) (At Ta = 0 to +25°C, Vdd = Vddq = 3.3 ± 0.3V, f = 1 MHz)
Symbol Parameter
Typ. Max. Unit
Cin1
Input Capacitance: A0-A10, BA0, BA1
—
4
pF
Cin2
Input Capacitance: (CLK, CKE, CS, RAS, CAS, WE, LDQM, UDQM) —
4
pF
CI/O
Data Input/Output Capacitance: DQ0-DQ31
—
5
pF
Notes:
1.  Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
2.  All voltages are referenced to GND.
3.  Vih (max) = Vddq + 1.2V with a pulse width ≤ 3 ns. The pluse width cannot be greater than one third of the cycle rate.
4.  Vil (min) = GND – 1.2V with a pulse < 3 ns. The pluse width cannot be greater than one third of the cycle rate.
5. An initial pause of 100us is required after power up, followed by two AUTO REFRESH commands, before proper device opera-
tion is ensured. (Vdd and VddQ must be powered up simultaneously. GND and GNDQ must be at same potential.)The two
AUTO REFRESH command wake-ups should be repeated anytime the tref refresh requirement is exceeded.
Integrated Silicon Solution, Inc. — www.issi.com
33
Rev.  B
07/23/09