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IS49RL18320 Datasheet, PDF (32/113 Pages) Integrated Silicon Solution, Inc – 1066 MHz DDR operation (2133 Mb/s/ball datarate)
576Mb: x18, x36 RLDRAM 3
ODT Characteristics
ODT Sensitivity
If either temperature or voltage changes after I/O calibration, then the tolerance limits
listed in Table 15 (page 30) and Table 16 (page 31) can be expected to widen according
to Table 17 (page 32) and Table 18 (page 32).
Table 17: ODT Sensitivity Definition
Symbol
RTT
Min
0.9 - dRTTdT × |DT| - dRTTdV × |DV|
Max
1.6 + dRTTdT × |DT| + dRTTdV × |
DV|
Units
RZQ/(2,4,6)
Note: 1. DT = T - T(@ calibration), DV = VDDQ - VDDQ(@ calibration) or VDD - VDD(@ calibration).
Table 18: ODT Temperature and Voltage Sensitivity
Change
dRTTdT
dRTTdV
Min
0
0
Max
1.5
0.15
Units
%/°C
%/mV
Integrated Silicon Solution, Inc. — www.issi.com
32
01/17/2012