IS61C64AL Datasheet, PDF (3/13 Pages) Integrated Silicon Solution, Inc – 8K x 8 HIGH-SPEED CMOS STATIC RAM

IS61C64AL
ISSI ^®
ABSOLUTE MAXIMUM RATINGS⁽¹⁾
Symbol Parameter
VTERM Terminal Voltage with Respect to GND
Value
Unit
–0.5 to +7.0
V
1
TSTG
Storage Temperature
–65 to +150
°C
PT
Power Dissipation
1.5
W
IOUT
DC Output Current (LOW)
20
mA
2
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections
of this specification is not implied. Exposure to absolute maximum rating conditions for
3
extended periods may affect reliability.
OPERATING RANGE
Range
Ambient Temperature
Commercial
0°C to +70°C
Industrial
–40°C to +85°C
Note:
1. If operated at 12ns, VDD range is 5V + 10%.
Speed
-10
-10
VDD⁽¹⁾
5V ± 5%
5V ± 5%
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter
VOH
Output HIGH Voltage
VOL
Output LOW Voltage
VIH
Input HIGH Voltage
VIL
Input LOW Voltage⁽¹⁾
ILI
Input Leakage
Test Conditions
VDD = Min., IOH = –4.0 mA
VDD = Min., IOL = 8.0 mA
GND ≤ VIN ≤ VDD
ILO
Output Leakage
GND ≤ VOUT ≤ VDD,
Outputs Disabled
Note:
1. VIL = –3.0V for pulse width less than 10 ns.
4
5
6
Min.
Max.
Unit
2.4
—
V7
—
0.4
V
2.2 VDD + 0.5 V
–0.3
0.8
V₈
Com. –1
1
µA
Ind. –2
2
Com. –1
Ind. –2
1
2
9 ^µA
10
11
12
Integrated Silicon Solution, Inc. — 1-800-379-4774
3
Rev. A
03/16/06