IS31LT3505 Datasheet, PDF (3/12 Pages) Integrated Silicon Solution, Inc – 1.0MHZ BOOST CONVERTER WITH 35V INTERNAL NMOS

IS31LT3505
ABSOLUTE MAXIMUM RATINGS
Parameter
Value
Supply voltage, V_DD
Voltage at LX pin
-0.3V ~ +6.0V
-0.3V ~ +40V
All other pins
-0.3V ~ +6.0V
Operate temperature range
-40°C ~ +85°C
Storage temperature range
-65°C ~ +150°C
Junction temperature range
-40°C ~ +150°C
Lead temperature (Soldering, 10s)
260°C
R_JA
ESD HBM
60°C/W
4kV
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only
and functional operation of the device at these or any other condition beyond those indicated in the operational sections of the specifications is
not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
T_A = -40°C ~ +85°C, V_DD = 12V (unless otherwise noted), Typical values are at T_A = 25°C.
Symbol
Parameter
Condition
Min. Typ.
V_DD
UVLO
∆UVLO
I_DD
I_SD
VP
V_{EN ON}
V_{EN OFF}
Fosc
D_MAX
R_{DS_ON}
I_{SW_LK}
I_{SW_LIMIT}
V_{OVP_TH}
V_FB
T_OTP
T_OTP-HYS
Supply voltage
Undervoltage threshold
Undervoltage threshold
hysteresis
Supply current
Shutdown current
Internal regulator
EN on threshold
EN off threshold
Operation frequency
Maximum duty cycle
Internal NMOS on-resistance
Internal NMOS leakage current
Internal NMOS current limit
Over voltage threshold
Feedback voltage
Over temperature threshold
Over temperature threshold
hysteresis
VP falling
Continuous switching
No switching
V_EN = 0V
6V<VDD<30V, C_VP=10µF
V_EN rising
V_EN falling
V_SW = 35V
Duty = 90%
6
2.9
100
2
1.1
15
4.5
5
1.4
1
90
0.8
1.8 2.1
0.9
0.285 0.3
150
50
Max.
30
5.5
0.4
1.2
1
2.4
0.315
Unit
V
V
mV
mA
μA
V
V
V
MHz
%
Ω
μA
A
V
V
°C
°C
Integrated Silicon Solution, Inc. – www.issi.com
3
Rev. A, 09/01/2011