IS42S16400E Datasheet, PDF (28/55 Pages) Integrated Silicon Solution, Inc – 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

IS42S16400E
WRITE Burst
T0
T1
CLK
COMMAND WRITE
NOP
ADDRESS
BANK,
COL n
DQ DIN n
DIN n+1
T2
T3
NOP
NOP
DON'T CARE
WRITE to WRITE
T0
T1
T2
CLK
COMMAND WRITE
NOP
WRITE
ADDRESS
BANK,
COL n
DQ DIN n
BANK,
COL b
DIN n+1
DIN b
DON'T CARE
Random WRITE Cycles
T0
T1
T2
T3
CLK
COMMAND WRITE
WRITE
WRITE
WRITE
ADDRESS
BANK,
COL n
DQ DIN n
BANK,
COL b
DIN b
BANK,
COL m
DIN m
BANK,
COL x
DIN x
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www.issi.com — Integrated Silicon Solution, Inc.
Rev.  C
08/07/09