IS45S32200C1 Datasheet, PDF (26/59 Pages) Integrated Silicon Solution, Inc – 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

IS45S32200C1
WRITE Burst
T0
T1
CLK
COMMAND WRITE
NOP
ADDRESS
BANK,
COL n
DQ DIN n
Burst length = 2 DQM ix low.
DIN n+1
T2
T3
NOP
NOP
DON'T CARE
WRITE to WRITE
T0
T1
T2
CLK
COMMAND WRITE
NOP
WRITE
ADDRESS
BANK,
COL n
DQ DIN n
DQMx is low. Each Write Command
may be to any bank.
BANK,
COL b
DIN n+1
DIN b
DON'T CARE
ISSI ^®
Random WRITE Cycles
T0
T1
T2
T3
CLK
COMMAND WRITE
WRITE
WRITE
WRITE
ADDRESS
BANK,
COL n
BANK,
COL b
BANK,
COL m
BANK,
COL x
DQ DIN n
DQMx is low. Each Write Command
may be to any bank.
DIN b
DIN m
DIN x
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Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. B
05/18/06