IS42SMVM32200K Datasheet, PDF (25/33 Pages) Integrated Silicon Solution, Inc – Auto refresh and self refresh

IS42SM/RM/VM32200K
Table7C: 1.8V Absolute Maximum Rating
Parameter
Ambient Temperature (Industrial)
Ambient Temperature (Commercial)
Storage Temperature
Voltage on Any Pin relative to VSS
Voltage on VDD relative to VSS
Short Circuit Output Current
Power Dissipation
Symbol
T_A
T_STG
V_IN, V_OUT
VDD, VDDQ
I_OS
P_D
Rating
-40 ~ 85
0 ~ 70
-55 ~ 150
-1.0 ~ 2.6
-1.0 ~ 2.6
50
1
Unit
°C
°C
V
V
mA
W
Note :
Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only, and functional operation of the device at these or any other conditions above those indicated in the operational sections of
this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Table8C: 1.8V Capacitance (T_A=25 °C, f=1MHz, VDD=1.8V)
Parameter
Pin
Input Capacitance
CLK
A0~A10, BA0~BA1, CKE, /CS, /RAS,
/CAS, /WE, DQM0~DQM3
Data Input/Output Capacitance
DQ0~DQ31
Symbol
C_I1
C_I2
C_IO
Min Max Unit
2
4
pF
2
4
pF
3
5
pF
Table9C: 1.8V DC Operating Condition (Voltage referenced to VSS=0V, T_A= -40 ~ 85 °C)
Parameter
Symbol
Min
Typ
Max
Unit
Note
Power Supply Voltage
VDD
1.7
1.8
1.95
V
VDDQ
1.7
1.8
1.95
V
1
Input High Voltage
Input Low Voltage
Output High Voltage
Output Low Voltage
Input Leakage Current
Output Leakage Current
V_IH
0.8 x VDDQ
-
VDDQ+0.3
V
2
V_IL
-0.3
0
0.3
V
3
V_OH
0.9 x VDDQ
-
-
V
I_OH= -0.1mA
V_OL
-
-
0.2
V
I_OL= +0.1mA
I_LI
-1
-
1
uA
4
I_LO
-1.5
1.5
uA
5
Note :
1. VDDQ must not exceed the level of VDD
2. VIH(max) = VDDQ+1.5V AC. The overshoot voltage duration is ≤ 3ns.
3. VIL(min) = -1.0V AC. The overshoot voltage duration is ≤ 3ns.
4. Any input 0V ≤ VIN ≤ VDDQ.
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with tri-state outputs.
5. DOUT is disabled, 0V ≤ VOUT ≤ VDDQ.
Rev. A | August 2012
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