IS42VM32160E Datasheet, PDF (24/33 Pages) Integrated Silicon Solution, Inc – Auto refresh and self refresh

IS42/45SM/RM/VM32160E
Table11B: 2.5V DC Characteristic (DC operating conditions unless otherwise noted)
Parameter
Operating Current
Precharge Standby Current
in Power Down Mode
Precharge Standby Current
in Non Power Down Mode
Active Standby Current
in Power Down Mode
Active Standby Current
in Non Power Down Mode
Burst Mode Operating Current
Auto Refresh Current (8K Cycle)
PASR
TCSR
4 Banks
85C
45C
Self
Refresh
Current
2 Banks
1 Bank
85C
45C
85C
45C
Half
Bank
85C
45C
Quarter
Bank
85C
45C
Deep Power Down Mode Current
Sym
Test Condition
IDD1
IDD2P
IDD2PS
IDD2N
IDD2NS
IDD3P
IDD3PS
IDD3N
IDD3NS
IDD4
IDD5
Burst Length=1, One Bank Active,
tRC  tRC(min) IOL = 0 mA
CKE  VIL(max), tCK = 10ns
CKE & CLK  VIL(max), tCK = 
CKE  VIH(min), /CS  VIH(min), tCK = 10ns
Input signals are changed one time during 2 clks.
CKE  VIH(min), CLK  VIL(max), tCK = 
Input signals are stable.
CKE  VIL(max), tCK = 10ns
CKE & CLK  VIL(max), tCK = 
CKE  VIH(min), /CS  VIH(min), tCK = 10ns
Input signals are changed one time during 2 clks.
CKE  VIH(min), CLK  VIL(max), tCK = 
Input signals are stable.
tCK>tCK(min), IOL = 0 mA, Page Burst
All Banks Activated, tCCD = 1 clk
tRC  tRFC(min), All Banks Active
Speed
-6 -75
70
300
300
10
4
1
1
25
15
130
120
110
700
500
600
450
IDD6 CKE  0.2V
550
400
520
380
520
350
IDD7
10
Note :
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Typical at room temperature.
4. Self Refresh mode and Deep Power Down are not supported for A2 grade with T_A>85C.
Unit Note
mA
1
A
mA
mA
mA
mA
1
mA
2
A
4
A
3,4
Rev. B | Oct. 2014
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