IS61VPS25636A Datasheet, PDF (23/32 Pages) Integrated Silicon Solution, Inc – 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM

IS61VPS25636A, IS61LPS25636A,IS61VPS51218A,IS61LPS51218A
ISSI ^®
TAP Electrical Characteristics Over the Operating Range^(1,2)
Symbol
Parameter
Test Conditions
VOH1
Output HIGH Voltage
IOH = –2.0 mA
VOH2
Output HIGH Voltage
IOH = –100 µA
VOL1
Output LOW Voltage
IOL = 2.0 mA
VOL2
Output LOW Voltage
IOL = 100 µA
VIH
Input HIGH Voltage
VIL
Input LOW Voltage
IX
Input Leakage Current
VSS ≤ V I ≤ VDDQ
Notes:
1. All Voltage referenced to Ground.
2. Overshoot: VIH (AC) ≤ VDD +1.5V for t ≤ tTCYC/2,
Undershoot: VIL (AC) ≤ 0.5V for t ≤ tTCYC/2,
Power-up: VIH < 2.6V and VDD < 2.4V and VDDQ < 1.4V for t < 200 ms.
Min.
1.7
2.1
—
—
1.7
–0.3
–10
Max.
—
—
0.7
0.2
VDD +0.3
0.7
10
Units
V
V
V
V
V
V
µA
TAP AC ELECTRICAL CHARACTERISTICS^(1,2) (OVER OPERATING RANGE)
Symbol Parameter
Min.
Max.
Unit
tTCYC
TCK Clock cycle time
100
—
ns
fTF
TCK Clock frequency
—
10
MHz
tTH
TCK Clock HIGH
40
—
ns
tTL
TCK Clock LOW
40
—
ns
tTMSS TMS setup to TCK Clock Rise
10
—
ns
tTDIS
TDI setup to TCK Clock Rise
10
—
ns
tCS
Capture setup to TCK Rise
10
—
ns
tTMSH TMSholdafterTCKClockRise
10
—
ns
tTDIH
TDI Hold after Clock Rise
10
—
ns
tCH
Capture hold after Clock Rise
10
—
ns
tTDOV
TCK LOW to TDO valid
—
20
ns
tTDOX TCK LOW to TDO invalid
0
—
ns
Notes:
1. Both tCS and tCH refer to the set-up and hold time requirements of latching data from the boundary scan register.
2. Test conditions are specified using the load in TAP AC test conditions. tR/tF = 1 ns.
Integrated Silicon Solution, Inc. — 1-800-379-4774
23
Rev. A
04/29/05