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| IS41LV16100B Datasheet, PDF (18/22 Pages) Integrated Silicon Solution, Inc – 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE | |||
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IS41LV16100B
CBR REFRESH CYCLE (Addresses; WE, OE = DON'T CARE)
ISSI ®
RAS
tRPC
tCP
UCAS/LCAS
I/O
tRP
tRAS
tCHR
tCSR
tRPC
tRP
tRAS
tCSR
tCHR
Open
HIDDEN REFRESH CYCLE(1) (WE = HIGH; OE = LOW)
RAS
tCRP
UCAS/LCAS
tASR
ADDRESS
Row
I/O
OE
tRAS
tRP
tRCD
tRSH
tAR
tRAD
tRAH tASC
tRAL
tCAH
Open
Column
tAA
tRAC
tCLZ
tCAC
tOE
tORD
tRAS
tCHR
tOFF(2)
Valid Data
Notes:
1. A Hidden Refresh may also be performed after a Write Cycle. In this case, WE = LOW and OE = HIGH.
2. tOFF is referenced from rising edge of RAS or CAS, whichever occurs last.
Open
tOD
Undefined
Donât Care
18
Integrated Silicon Solution, Inc. â www.issi.com â 1-800-379-4774
Rev. B
04/13/05
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