IS61LF25672A Datasheet, PDF (13/35 Pages) Integrated Silicon Solution, Inc – 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM

IS61LF25672A IS61LF51236A IS61LF102418A
IS61VF25672A IS61VF51236A IS61VF102418A
INTERLEAVED BURST ADDRESS TABLE (MODE = VDD or No Connect)
External Address
A1 A0
1st Burst Address
A1 A0
2nd Burst Address
A1 A0
3rd Burst Address
A1 A0
00
01
10
11
01
00
11
10
10
11
00
01
11
10
01
00
ISSI ^®
LINEAR BURST ADDRESS TABLE (MODE = VSS)
0,0
A1', A0' = 1,1
0,1
1,0
ABSOLUTE MAXIMUM RATINGS⁽¹⁾
Symbol Parameter
TSTG
Storage Temperature
PD
Power Dissipation
IOUT
Output Current (per I/O)
VIN, VOUT Voltage Relative to Vss for I/O Pins
VIN
Voltage Relative to Vss for
for Address and Control Inputs
VDD
Voltage on VDD Supply Relative to Vss
Value
–55 to +150
1.6
100
–0.5 to VDDQ + 0.5
–0.5 to VDD + 0.5
Unit
°C
W
mA
V
V
–0.5 to 4.6
V
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections of
this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
2. This device contains circuity to protect the inputs against damage due to high static voltages
or electric fields; however, precautions may be taken to avoid application of any voltage higher
than maximum rated voltages to this high-impedance circuit.
3. This device contains circuitry that will ensure the output devices are in High-Z at power up.
Integrated Silicon Solution, Inc. — 1-800-379-4774
13
Rev. E
04/21/06